Porous polyimide (PI) films are a promising low-k dielectric material for high-frequency data transmission with low signal attenuation. Pores are generated by non-solvent induced phase separation (NIPS) during phase inversion of polymer solution via non-solvent accumulation and solvent diffusion. In this study, aromatic PI was employed as a matrix for NIPS, and the influence of polymer concentration and liquid—liquid demixing time on the morphology of pores in the PI films was investigated. This ensured control over the porous structure of the PI film and provided desirable dielectric properties in a broad frequency range of 100 Hz–30 MHz (1.99 at 30 MHz) and thermal stability (Td5% > 576 °C, Tg > 391 °C). This study addresses the effect of polymer concentration and coagulation time on the morphology and physical properties of PI sponge films and provides guidance on the design and optimization of architectures for polymeric materials requiring pore modification.
Polymers with a low dielectric constant (Dk) are promising materials for high-speed communication networks, which demand exceptional thermal stability, ultralow Dk and dissipation factor, and minimum moisture absorption. In this paper, we prepared a series of novel low-Dk polyimide films containing an MCM-41-type amino-functionalized mesoporous silica (AMS) via in situ polymerization and subsequent thermal imidization and investigated their morphologies, thermal properties, frequency-dependent dielectric behaviors, and water permeabilities. Incorporating 6 wt.% AMS reduced the Dk at 1 MHz from 2.91 of the pristine fluorinated polyimide (FPI) to 2.67 of the AMS-grafted FPI (FPI-g-AMS), attributed to the free volume and low polarizability of fluorine moieties in the backbone and the incorporation of air voids within the mesoporous AMS particles. The FPI-g-AMS films presented a stable dissipation factor across a wide frequency range. Introducing a silane coupling agent increased the hydrophobicity of AMS surfaces, which inhibited the approaching of the water molecules, avoiding the hydrolysis of Si–O–Si bonds of the AMS pore walls. The increased tortuosity caused by the AMS particles also reduced water permeability. All the FPI-g-AMS films displayed excellent thermooxidative/thermomechanical stability, including a high 5% weight loss temperature (>531 °C), char residue at 800 °C (>51%), and glass transition temperature (>300 °C).