Cu(In,Ga)Se2 (CIGS)-based thin-film solar cells are currently among the most efficient. Zinc sulfide (ZnS) is the best buffer layer used in CIGS-based solar cells because it is non-toxic and has a wide band gap. In this study, we present a simulation of a CIGS solar cell with a ZnS buffer layer, carried out using the Silvaco-Atlas simulator. We attained an efficiency of 24.13%, short-circuit current of 37.81 mA/cm2, an open circuit voltage of 740 mV and a fill factor of 78.78% at a bandgap around 1.41 eV, corresponding to an x ratio of 0.5. The photovoltaic performance of the ZnS/CIGS solar cell is improved by optimizing the effects of layer parameters such as thickness, acceptor and donor densities of the CIGS absorber and ZnS buffer layers. For a 0.035 μm thick ZnS acceptor with a density of 6 × 1017 cm-3 and a 3 μm thick CIGS donor with a density of 1018 cm-3, a maximum efficiency improved to 27.22%.

This paper presents a comprehensive comparative study and analytical modelling of electrical performance of AlGaN/GaN high-electron-mobility transistor (HEMT) and metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) biosensors. Sensing parameters such as the I-V characteristics and sensitivity parameter for biomolecules detection in the cavity region are taken into consideration. In this paper, the permittivity is varied according to the biomolecule to be sensed by the biosensor. The maximal variation of the electrical performance of the biosensor obtained is higher in HEMT as compared with MOSHEMT. The simulation results of the analytical model obtained by using MATLAB verified by a comparison with experimental data and atlas-technology computer aided design (Atlas-TCAD), and shown good agreement with each other. Thereby, we could improve the validity of the proposed model. The AlGaN/GaN HEMT have shown good sensing of 141.73 at biomolecular permittivity of 2.5 which can be used for biosensing applications effectively.

In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors. The model focuses on detecting biomolecules such as ChOx, protein, streptavidin and uricase by modulating the dielectric constant. The sensitivity parameters used for biomolecule detection include drain current, transconductance, and drain off sensitivity. The dielectric constant is adjusted based on the specific biomolecule being sensed by the biosensor. The variation in dielectric leads to changes in drain current, with an increase or decrease depending on the positive charge of the biomolecules. The HEMT device exhibits greater variations in drain current, transconductance, and drain off sensitivity compared to the MOSHEMT device when the biomolecule is present in the cavity region. The simulation results are validated by comparing them with Atlas-TCAD (atlas-technology computer aided design) and experimental data, showing excellent agreement.