Ioannis Paradisanos

Mr. Ioannis Paradisanos

Institut National des Sciences Appliquées, Centre national de la recherche scientifique, Toulouse, France
orcid

Research Focus & Metrics

Academic Career Length

13Years (2014-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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14 January 2020 in Physical Review Letters
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MTMatthew E. Trusheim
Matthew E. Trusheim
BPBenjamin Pingault
Benjamin Pingault
NWNoel H. Wan
Noel H. Wan
MGMustafa Gündoğan
Mustafa Gündoğan
LSLorenzo De Santis
Lorenzo De Santis
DEDirk Englund
Dirk Englund
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes, and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phonon limited with an exponential temperature scaling leading to T1>10  ms, and the coherence time, T2* reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.

14 December 2016 in Advanced Energy Materials
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GKGeorge Kakavelakis
George Kakavelakis
TMTemur Maksudov
Temur Maksudov
DKDimitrios Konios
Dimitrios Konios
Ioannis ParadisanosIoannis Paradisanos
Ioannis Paradisanos
George KioseoglouGeorge Kioseoglou
George Kioseoglou
Emmanuel KymakisEmmanuel Kymakis
Emmanuel Kymakis

10 August 2020 in Nature Nanotechnology
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NLNadine Leisgang
Nadine Leisgang
SSShivangi Shree
Shivangi Shree
Ioannis ParadisanosIoannis Paradisanos
Ioannis Paradisanos
LSLukas Sponfeldner
Lukas Sponfeldner
CRCedric Robert
Cedric Robert
BUBernhard Urbaszek
Bernhard Urbaszek

13 May 2020 in Nature Communications
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Ioannis ParadisanosIoannis Paradisanos
Ioannis Paradisanos
SSShivangi Shree
Shivangi Shree
AGAntony George
Antony George
NLNadine Leisgang
Nadine Leisgang
CRCedric Robert
Cedric Robert
BUBernhard Urbaszek
Bernhard Urbaszek
Combining MoS2 monolayers to form multilayers allows to access new functionalities. Deterministic assembly of large area van der Waals structures requires concrete indicators of successful interlayer coupling in bilayers grown by chemical vapor deposition. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in both as-grown MoS2 homobilayer samples and in artificially stacked bilayers from monolayers, all grown by chemical vapor deposition. We show that hole delocalization over the bilayer is only allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about t⊥ = 49 meV. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.

17 January 2018 in Advanced Energy Materials
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GKGeorge Kakavelakis
George Kakavelakis
Ioannis ParadisanosIoannis Paradisanos
Ioannis Paradisanos
BPBarbara Paci
Barbara Paci
AGAmanda Generosi
Amanda Generosi
MPMichael Papachatzakis
Michael Papachatzakis
Emmanuel KymakisEmmanuel Kymakis
Emmanuel Kymakis

25 November 2021 in Nature Communications
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SSShivangi Shree
Shivangi Shree
DLDelphine Lagarde
Delphine Lagarde
LLLaurent Lombez
Laurent Lombez
CRCedric Robert
Cedric Robert
ABAndrea Balocchi
Andrea Balocchi
Ioannis ParadisanosIoannis Paradisanos
Ioannis Paradisanos
Second-harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also interlayer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations. Since interlayer exciton transitions are highly tunable also by choosing twist angle and material combination our results open up new approaches for designing the SHG response of layered materials.