In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAlN/GaN single quantum well by solving numerically the coupled equations Schrödinger–Poisson self-consistently. The linear, nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness. The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness. In addition, it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration. The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.

In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-Al _x Ga_(1−x)N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current–voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, Al _x Ga_(1−x)N width, and the aluminum concentration x _Al. The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current–voltage (I–V) characteristic strongly depends on aluminum concentration x _Al. It is shown that the peak-to-valley ratio (PVR) increases with x _Al value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors.