Ivan Egorov was born in Saratov, Russia, in 1983. He received a bachelor of science and a master of science in physical engineering from the Department of Physical and Quantum Electronics, Moscow Institute of Physics and Technology, in 2006. He has been a Research Engineer with the Center for Molecular Electronics, Moscow Institute of Physics and Technology since 2004. He is the author of eight articles. His research interests include seismic sensor development, the influence of electrochemical cell parameters on noise, and the nonlinear characteristics of electrochemical cells at extreme external parameters: input, signal, and temperature. Ivan received his PhD in 2021.
Moscow Institute of Physics and Technology
Dolgoprudnyy, Moskovskaya Oblast’, Russia