To construct functional photonic integrated circuits, an efficient and compact laser is expected to be incorporated into the complementary metal–oxide–semiconductor platform. Monolithic integration of III–V lasers on pre-patterned Si substrates by the aspect ratio trapping method is a promising solution. Here, microwires with reversed ridge waveguides (RRWs) on pre-patterned Si substrates were reported. By metal–organic chemical vapor deposition, high-quality InP microwires with RRWs were obtained, and InGaAs/InGaAsP multi-quantum-well structures with InGaAsP separate confinement hetero structure (SCH–MQW) were successfully achieved. The SCH–MQW structure was buried in the InP microwire, which was beneficial for transferring the heat generated in the active region. The micron size also contributes to the efficiency of thermal diffusion. Further, simulation results showed that the metal absorption loss could be less than 4 dB/cm by properly controlling the contact area between metal electrodes and microwires. This proposed structure opens up an alternative pathway for electrically driven III–V lasers seamlessly interfaced with Si-photonics.

High-mesa semi-insulating buried heterostructure (SIBH) lasers with InP: Fe have great potential in high-speed and high-power scenarios, but the leakage current problem under high current injections has always limited their application. In order to solve the issue of low output power and low efficiency for high-mesa SIBH lasers, the mechanism of leakage current generation in InP-based semi-insulating (SI) layers at high injection levels was analyzed through numerical simulation. The deterioration of the device performance is due to the hole current-induced electron leakage current, which results from the reduction of the potential barrier and Fe-Zn interdiffusion. Thus, lasers with wide bandgap layers of InAlAs and ZnCdSe were employed for current blocking, the power and wall-plug efficiency of which were improved by more than 36% and 5%, respectively. For the first time, a SIBH laser based on lattice-matched ZnCdSe barrier layers is proposed, which shows good output performance and high reliability. The introduction of the wide bandgap layer in the SIBH structure establishes potential barriers to confine both carrier leakages at high injection levels, which realizes the high-power and high-efficiency operation of the laser.

The In_1−xGa_xAs_yP_1−y submicron wires with adjustable wavelengths directly grown by metalorganic chemical vapor deposition on a V-groove-patterned Si (001) substrate are reported in this paper. To ensure the material quality, aspect ratio trapping and selective area growth methods are used. By changing the parameters in the epitaxy process, we realize the adjustment of the material energy band of In_1−xGa_xAs_yP_1−y submicron wires. By further optimizing the growth conditions, we realize high-quality submicron wires. The morphology of the submicron wires is characterized by scanning electron microscopy and transmission electron microscopy. Through high-resolution X-ray diffraction measurement, it is disclosed that the lattice of the optimized In_1−xGa_xAs_yP_1−y part matches that of InP. A PL spectrum test shows that the PL spectrum peak is from 1260 nm to 1340 nm. The In_1−xGa_xAs_yP_1−y can be used as a well material or barrier material in a quantum well, which would promote the development of silicon-based lasers.