The effect of one-percent substitution of iron for manganese on the physical (magnetic, electrical, thermal, and galvanomagnetic) properties and the crystal structure of the Ni54Mn21Ga25alloy has...

The properties and structure of the martensitic phase of alloys with a near-stoichiometric equiatomic Ni50Mn50composition, as well as martensitic transformations in them, are investigated in a wide...

The effect of severe plastic deformation by torsion (high-pressure torsion or HPT) on the crystalline structure and behavior of electrical resistivity, thermoelectric power, thermal expansion, and...

A powder sample and single-crystal plates of the topological insulator Bi2Te3 have been investigated using the 125Te NMR method at room temperature and at low temperatures in the range from 12.5 to...

The residual resistivity, Hall effect, and magnetization of Co₂YSi (Y = Ti, V, Cr, Mn, Fe, Co, Ni) Heusler alloys were considered at T = 4.2 K and in fields up to 100 kOe. It is shown that as the number of valence electrons z ranges from 26 to 32, significant changes in the residual resistivity ρ₀, magnetization M_s, sign and magnitude of the normal R₀ and anomalous R_S Hall effect coefficients are observed during the transition from Co₂TiSi to Co₂NiSi. It is established that there is a clear correlation between the values ρ₀, R₀, R_S and M_s, depending on the number z, which can be associated with the appearance of a half-metal ferromagnetic state and/or spin gapless semiconductor. As z changes, the anomalous Hall effect coefficient has a power-law dependence on the residual electrical resistivity with an exponent of k = 3.1, which diverges with existing theories but agrees well with the experimental data obtained earlier for similar half-metallic ferromagnetic Heusler alloys.

PtSn₄ and WTe₂ single crystals were grown, and the resistivity was studied in the temperature range from 4.2 to 80 K in various magnetic fields up to 10 T in detail. It is suggested that the observed quadratic temperature dependence of the electrical resistivity at low temperatures in zero field can be due to, in addition to electron-electron scattering, the “electron-phonon-surface” interference scattering mechanism. The transition from high effective magnetic fields to weak ones, which is observed in compensated conductors with a closed Fermi surface, was proposed as a possible explanation for the minimum on the temperature dependence of the resistivity of PtSn₄ and WTe₂ in a magnetic field. The values of the mean free path of current carriers were estimated in these materials.