Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted attention as promising next-generation electronic devices and sensors. In this study, we fabricated a novel nanoelectronic device based on a black-phosphorus-gated WSe₂/SnSe₂ van der Waals (vdW) tunnel field-effect transistor (TFET), where hexagonal boron nitride (h-BN) was used as the gate insulator. We performed morphological, electrical, and optoelectronic characterizations. The p-WSe₂/n-SnSe₂ heterostructure-based TFET exhibited p-type behavior with a good dependence on the gate voltage. The TFET device showed a trend toward negative differential resistance (NDR) originating from band-to-band tunneling, which can be tuned by applying a gate voltage. The optoelectronic performance of the TFET device was low, with a maximum photoresponsivity of 11 mA W⁻¹, owing to the large device length. The results obtained herein promote the integration of black phosphorus into low-energy-consumption 2D vdW TFETs.

In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe₂) using two insulator materials, silicon dioxide (SiO₂) and silicon nitride (SiN). We performed morphological and electrical characterizations in which the devices showed good electronic performance, such as high mobility and high I_on/I_off ratios exceeding 10⁴. The subthreshold swing (ss) was somewhat high in all devices owing to the dimensions of our devices. In addition, the transfer curves showed good controllability as a function of gate voltage. The photogating effect was weakened in MoSe₂/SiN/Si, indicating that SiN is a good alternative to silicon oxide as a gate dielectric material.

Herein, we report the fabrication of a novel heterojunction field-effect transistor (HJFET) based on two-dimensional graphene (Gr), molybdenum diselenide (MoSe₂), and black phosphorus (BP) that is shielded using hexagonal boron nitride to prevent device degradation. We perform electrical and optoelectronic characterizations of Gr/n-MoSe₂ and Gr/n-MoSe₂/p-BP heterojunctions. Heterojunction n-MoSe₂/p-BP exhibits a potential barrier at the interface, which allows the use of BP as a top-gate contact to adjust the electrical and optoelectronic performances of the Gr/n-MoSe₂ heterojunction. In the absence of a gate voltage, the Gr/n-MoSe₂ and Gr/n-MoSe₂/p-BP heterojunctions indicate photoresponsivity (R_λ) and specific detectivity (D*) of 1.77 AW⁻¹ and 1.4 × 10¹⁰ cmHz^1/2W⁻¹, and 0.8 AW⁻¹ and 0.3 × 10¹⁰ cmHz^1/2W⁻¹, respectively. The Gr/n-MoSe₂ junction field-effect transistor with p-BP as gate contact demonstrates the best optoelectronic performance with high stability in terms of photoresponsivity R_λmax = 3.37 AW⁻¹ and specific detectivity D^*_max = 3.16 × 10¹⁰ cmHz^1/2W⁻¹, rendering it extremely promising for photodetection applications.

Recently, two-dimensional materials have gained significant attention due to their outstanding properties such as high charge mobility, mechanical strength, and electrical characteristics. These materials are considered one of the most promising solutions to overcome the limitations of semiconductor technology and are being utilized in various semiconductor device research. In particular, molybdenum diselenide (MoSe₂) and tungsten diselenide (WSe₂) are actively being developed for device applications due to their high electron mobility, optical properties, and electrical characteristics. In this study, we fabricated MoSe₂ and WSe₂-based junction field-effect transistors (JFET) and further deposited two-dimensional materials on the same device to fabricate and compare JFETs with a gate-all-around (GAA) structure. The research results showed that the GAA-structure JFET exhibited performance improvements in drain current, subthreshold swing (SS) transconductance (gm), and mobility, achieving enhancements ranging from a minimum of 1.2 times to a maximum of 10 times compared to conventional JFET.