MoSe₂-doped ultralong Se microwires of length/diameter ratio in the order of ∼240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe₂-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ∼10² for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour.

High efficiencies of 16.29% and 18.78% are obtained in inverted PSCs using TPE-PDI ₄ as an electron transporting material and interfacial material, respectively.

A device with the lateral structure of Ag|MnO_x|Ag was developed using a single MnO_x nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.