The process of accurately gauging lifetime improvements in organic photovoltaics (OPVs) or other similar emerging technologies, such as perovskites solar cells is still a major challenge. The presented work is part of a larger effort of developing a worldwide database of lifetimes that can help establishing reference baselines of stability performance for OPVs and other emerging PV technologies, which can then be utilized for pass‐fail testing standards and predicting tools. The study constitutes scanning of literature articles related to stability data of OPVs, reported until mid‐2015 and collecting the reported data into a database. A generic lifetime marker is utilized for rating the stability of various reported devices. The collected data is combined with an earlier developed and reported database, which was based on articles reported until mid‐2013. The extended database is utilized for establishing the baselines of lifetime for OPVs tested under different conditions. The work also provides the recent progress in stability of unencapsulated OPVs with different architectures, as well as presents the updated diagram of the reported record lifetimes of OPVs. The presented work is another step forward towards the development of pass‐fail testing standards and lifetime prediction tools for emerging PV technologies.

The on-surface synthesis of two-dimensional (2D) polymers from monomers represents a useful strategy for designing lattice, orbital and spin symmetries. Like other 2D materials, the ordered stacking of 2D polymers into bilayers may allow developing unique optoelectronic, charge transport and magnetic properties not found in the individual layers. However, controlling layer stacking of 2D polymers remains challenging. Here we describe a method for synthesizing 2D polymer bilayers or bilayer 2D covalent organic frameworks at the liquid–substrate interface through the direct condensation of monomers. More importantly, we also show how factors such as monomer structure and solvent mixture influence the bilayer stacking modes and how, under certain conditions, large-area moiré superlattices emerge from the twisted bilayer stacking. This finding offers new opportunities for the design of bilayer stacked framework materials with tunable electronic and structural properties.

Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar phases. This challenges the understanding and control of polar phase stabilization and ferroelectric properties. Several factors, such as dopants, oxygen vacancies, or stress, among others, have been investigated and shown to have a crucial role on optimizing the ferroelectric response. Stress generated during deposition or annealing of thin films is a main factor determining the formed crystal phases and influences the lattice strain of the polar orthorhombic phase. It is difficult to discriminate between stress and strain effects on polycrystalline ferroelectric HfO2 films, and the direct impact of orthorhombic lattice strain on ferroelectric polarization has yet to be determined experimentally. Here, we analyze the crystalline phases and lattice strain of several series of doped HfO2 epitaxial films. We conclude that stress has a critical influence on metastable orthorhombic phase stabilization and ferroelectric polarization. On the contrary, the lattice deformation effects are much smaller than those caused by variations in the orthorhombic phase content. The experimental results are confirmed by density functional theory calculations on HfO2 and Hf0.5Zr0.5O2 ferroelectric phases.

Rhombohedral phase Hf_xZr_1‐xO₂ (HZO, x from 0 to 1) films are promising for achieving robust ferroelectric polarization without the need for an initial wake‐up pre‐cycling, as is normally the case for the more commonly studied orthorhombic phase. However, a large spontaneous polarization observed in rhombohedral films is not fully understood, and there are also large discrepancies between experimental and theoretical predictions. In this work, in rhombohedral ZrO₂ thin films, we show that oxygen vacancies are not only a key factor for stabilizing the phase, but they are also a source of ferroelectric polarization in the films. This is shown experimentally through the investigation of the structural properties, chemical composition and the ferroelectric properties of the films before and after an annealing at moderate temperature (400 °C) in an oxygen environment to reduce the V_O concentration compared. The experimental work is supported by density functional theory (DFT) calculations which show that the rhombohedral phase is the most stable one in highly oxygen defective ZrO₂ films. The DFT calculations also show that V_O contribute to the ferroelectric polarization. Our findings reveal the importance of V_O for stabilizing rhombohedral ZrO₂ thin films with superior ferroelectric properties.