Hosung Seo

Hosung Seo


Research Focus & Metrics

Academic Career Length

9Years (2018-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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26 April 2021 in Nature Reviews Materials
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GWGary Wolfowicz
Gary Wolfowicz
FHF. Joseph Heremans
F. Joseph Heremans
CAChristopher P. Anderson
Christopher P. Anderson
SKShun Kanai
Shun Kanai
HSHosung Seo
Hosung Seo
DADavid D. Awschalom
David D. Awschalom

26 September 2018 in Chemistry of Materials
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Journal Article
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HSHosung Seo
Hosung Seo
YPYuan Ping
Yuan Ping
GGGiulia Galli
Giulia Galli

12 August 2022 in npj Quantum Information
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HPHuijin Park
Huijin Park
JLJunghyun Lee
Junghyun Lee
SHSang-Wook Han
Sang-Wook Han
SOSangwon Oh
Sangwon Oh
HSHosung Seo
Hosung Seo
Nitrogen-vacancy (NV) centers in diamond have been developed into essential hardware units for a wide range of solid-state-based quantum technology applications. While such applications require the long spin coherence times of the NV centers, they are often limited due to decoherence. In this study, we theoretically investigate the decoherence of NV-spin ensembles induced by nitrogen impurities (P1 centers), which are one of the most dominant and inevitable magnetic field noise sources in diamond. We combined cluster correlation expansion and density functional theory to compute the Hahn-echo spin-coherence time of the NV centers for a broad range of P1 concentrations. Results indicate a clear linear dependence of T2 on P1 concentrations on a log scale with a slope of −1.06, which is in excellent agreement with previous experimental results. The interplay between the Jahn–Teller effect and the hyperfine interaction in the P1 center plays a critical role in determining the bath dynamics and the resulting NV decoherence. Our results provide a theoretical upper bound for the NV-spin T2 over a wide range of P1 densities, serving as a key reference for materials optimization and spin bath characterization to develop highly coherent NV-based devices for quantum information technology.

17 July 2020 in ACS Applied Materials & Interfaces
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DYDonggyu Yim
Donggyu Yim
MYMihyang Yu
Mihyang Yu
GNGichang Noh
Gichang Noh
JLJieun Lee
Jieun Lee
HSHosung Seo
Hosung Seo

7 September 2022 in npj 2D Materials and Applications
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JLJaewook Lee
Jaewook Lee
HPHuijin Park
Huijin Park
HSHosung Seo
Hosung Seo
Negatively charged boron vacancies (VB−) in hexagonal boron nitride (h-BN) are a rapidly developing qubit platform in two-dimensional materials for solid-state quantum applications. However, their spin coherence time (T2) is very short, limited to a few microseconds owing to the inherently dense nuclear spin bath of the h-BN host. As the coherence time is one of the most fundamental properties of spin qubits, the short T2time of VB−could significantly limit its potential as a promising spin qubit candidate. In this study, we theoretically proposed two materials engineering methods, which can substantially extend the T2time of the VB−spin by four times more than its intrinsic T2. We performed quantum many-body computations by combining density functional theory and cluster correlation expansion and showed that replacing all the boron atoms in h-BN with the10B isotope leads to the coherence enhancement of the VB−spin by a factor of three. In addition, the T2time of the VB−can be enhanced by a factor of 1.3 by inducing a curvature around VB−. Herein, we elucidate that the curvature-induced inhomogeneous strain creates spatially varying quadrupole nuclear interactions, which effectively suppress the nuclear spin flip-flop dynamics in the bath. Importantly, we find that the combination of isotopic enrichment and strain engineering can maximize the T2time of VB−, yielding 207.2 μs and 161.9 μs for single- and multi-layer h-10BN, respectively. Furthermore, our results can be applied to any spin qubit in h-BN, strengthening their potential as material platforms to realize high-precision quantum sensors, quantum spin registers, and atomically thin quantum magnets.

20 September 2021 in ACS Applied Materials & Interfaces
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Journal Article
Closed access
JBJooyong Bhang
Jooyong Bhang
HMHe Ma
He Ma
DYDonggyu Yim
Donggyu Yim
GGGiulia Galli
Giulia Galli
HSHosung Seo
Hosung Seo