There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H₂S, H₂, and NO₂ at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.

In this study, we report the fabrication of a flexible film-shaped resistive-type pressure sensor with high performance and versatile applications by sandwiching a polystyrene ball@reduced graphene-oxide (PS ball@rGO) core–shell nanomaterial film layer between two thin flexible polydimethylsiloxane (PDMS) sheets. The preparation of materials and the fabrication processes of the sensor devices are simple, efficient, and economical. The detection limit of the PS ball@rGO-based pressure sensors can be as low as 3 Pa with a low energy consumption of ∼1 μW at a low bias voltage of 1 V; moreover, these sensors exhibit a short response time of 50 ms with a high sensitivity of 50.9 kPa⁻¹ at 3–1000 Pa and high stability even after 20 000 loading–unloading cycles. In addition, different applications of our flexible sensor in detecting blood pulse, swallowing, skin pulling, and articular activities were demonstrated when the sensor was attached to the human body. Furthermore, by an efficient scalable fabrication process, a large-area integrated pressure sensor array was demonstrated, and it enabled patterning of the mapped spatial pressure distribution as well as large-area monitoring of body pressure, pulses, and human actions.

Copper nanowire networks (NWs) coated with a graphene layer through a carbon-enclosed chemical vapor deposition technique at a low temperature of 400 °C with a low sheet resistance of 23.2 Ω sq⁻¹ and a high transmittance of 83.4%, which is comparable to typical values of tin-doped indium oxide (ITO), as a transparent conducting electrode were demonstrated.

In this work, we create plasma-engineered-1T/2H 3D-hierarchical WSe ₂ nanoscrews derived from WO _x 3D-hierarchical nanoscrews through a low-temperature plasma-assisted selenization process with controlled shapes grown using a glancing angle deposition (GLAD) system.

High quality PtSe₂ can be fabricated under 600 °C and has excellent NO₂ sensitivity, which can reach sub ppb level.

Utilization of light to boost the performance of gas sensors allows us to operate sensor devices at room temperature. Here, we, for the first time, demonstrated an indoor light-activated 3D cone-shaped MoS₂ bilayer-based NO gas sensor with ppb-level detection operated at room-temperature. Large-area cone-shaped (CS)-MoS₂ bilayers were grown by depositing 2 nm-thick MoO₃ layers on a 2′′ three-dimensional (3D) cone-patterned sapphire substrate (CPSS) followed by a sulfurization process via chemical vapor deposition. Because the exposed area of MoS₂ bilayers is increased by 30%, the CS-MoS₂ gas sensor (GS) demonstrated excellent performance with a response of ∼470% and a fast response time of ∼25 s after exposure to 1 ppm of NO gas illuminated by ultraviolet (UV) light with a wavelength of 365 nm. Such extraordinary performance at room temperature is attributed to the enhanced light absorption because of the light scattering effect caused by the 3D configuration and photo-desorption induced by UV illumination. For NO concentrations ranging from 2 ppm down to 0.06 ppm, the CS-MoS₂ GS demonstrated a stable sensing behavior with a high response and fast response time (470% and 25 s at 2 ppm NO) because of the light absorption enhanced by the 3D structure and photo-desorption under constant UV illumination. The CS-MoS₂ GS exhibits a high sensitivity (∼189.2 R% ppm⁻¹), allowing the detection of NO gas at 0.06 ppm in 130 s. In addition, the 3D cone-shaped structure prolonged the presence of sulfur vapor around MoO₃, allowing MoO₃ to react with sulfur completely. Furthermore, the CS-MoS₂ GS using an indoor lighting to detect NO gas at room temperature was demonstrated for the first time where the CS-MoS₂ GS exhibits a stable cycling behavior with a high response (165% at 1 ppm NO) in 50 s; for concentration as low as ∼0.06 ppm, the response of ∼75% in 150 s can be achieved.