Atomically thin layered two-dimensional (2D) materials have provided a rich library for both fundamental research and device applications. Bandgap engineering and controlled material response can be achieved from artificial heterostructures. Recently, excitonic lasers have been reported using transition metal dichalcogenides; however, the emission is still the intrinsic energy bandgap of the monolayers. Here, we report a room temperature interlayer exciton laser with MoS₂/WSe₂ heterostructures. The onset of lasing was identified by the distinct kink in the “L-L” curve and the noticeable spectral linewidth collapse. Different from visible emission of intralayer excitons in monolayer components, our laser works in the infrared range, which is fully compatible with the well-established technologies in silicon photonics. Long lifetime of interlayer excitons relaxes the requirement of the cavity quality factor by orders of magnitude. Room temperature interlayer exciton lasers might open new perspectives for developing coherent light sources with tailored optical properties on silicon photonics platforms.

Graphene has great potential for enhancing light−matter interactions in a two-dimensional regime due to surface plasmons with low loss and strong light confinement. Further utilization of graphene in nanophotonics relies on the precise control of light localization properties. Here, we demonstrate the tailoring of electromagnetic field localizations in the mid-infrared region by precisely shaping the graphene into nanostructures with different geometries. We generalize the phenomenological cavity model and employ nanoimaging techniques to quantitatively calculate and experimentally visualize the two-dimensional electromagnetic field distributions within the nanostructures, which indicate that the electromagnetic field can be shaped into specific patterns depending on the shapes and sizes of the nanostructures. Furthermore, we show that the light localization performance can be further improved by reducing the sizes of the nanostructures, where a lateral confinement of λ₀/180 of the incidence light can be achieved. The electromagnetic field localizations within a nanostructure with a specific geometry can also be modulated by chemical doping. Our strategies can, in principle, be generalized to other two-dimensional materials, therefore providing new degrees of freedom for designing nanophotonic components capable of tailoring two-dimensional light confinement over a broad wavelength range.

Transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform to explore unique excitonic physics via the properties of the constituent TMDs and external stimuli. Interlayer excitons (IXs) can form in TMD heterobilayers as delocalized or localized states. However, the localization of IX in different types of potential traps, the emergence of biexcitons in the high-excitation regime, and the impact of potential traps on biexciton formation have remained elusive. In our work, we observe two types of potential traps in a MoSe₂/WSe₂ heterobilayer, which result in significantly different emission behavior of IXs at different temperatures. We identify the origin of these traps as localized defect states and the moiré potential of the TMD heterobilayer. Furthermore, with strong excitation intensity, a superlinear emission behavior indicates the emergence of interlayer biexcitons, whose formation peaks at a specific temperature. Our work elucidates the different excitation and temperature regimes required for the formation of both localized and delocalized IX and biexcitons and, thus, contributes to a better understanding and application of the rich exciton physics in TMD heterostructures.