Spin-momentum locked surface states in topological insulators (TIs) provide a promising route for achieving high spin-orbit torque (SOT) efficiency beyond the bulk spin-orbit coupling in heavy metals (HMs). However, in previous works, there is a huge discrepancy among the quantitative SOTs from TIs in various systems determined by different methods. Here, we systematically study the SOT in the $\mathrm{TI}(\mathrm{HM})/\mathrm{Ti}/\mathrm{CoFeB}/\mathrm{MgO}$ systems by the same method, and make a conclusive assessment of SOT efficiency for TIs and HMs. Our results demonstrate that TIs show more than one order of magnitude higher SOT efficiency than HMs even at room temperature, at the same time the switching current density as low as $5.2\times {10}^5\mathrm{A}{\mathrm{cm}}^{-2}$ is achieved with ${({\mathrm{Bi}}_{1-x}{\mathrm{Sb}}_x)}_2{\mathrm{Te}}_3$. Furthermore, we investigate the relationship between SOT efficiency and the position of Fermi level in ${({\mathrm{Bi}}_{1-x}{\mathrm{Sb}}_x)}_2{\mathrm{Te}}_3$, where the SOT efficiency is significantly enhanced near the Dirac point, with the most insulating bulk and conducting surface states, indicating the dominating SOT contribution from topological surface states. This work unambiguously demonstrates the ultrahigh SOT efficiency from topological surface states.

The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 10⁵ A cm⁻² have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiency θ_SH in TIs is quantified by both the SOT-induced shift of the magnetic switching field (θ_SH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θ_SH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.

Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field. Through strain-mediated magnetoelectric coupling, the electric field modifies the magnetic anisotropy of the free layer leading to its magnetization rotation so that the relative magnetization configuration of the magnetic tunnel junction can be efficiently modulated. Our findings offer significant fundamental insight into information storage using electric writing and magnetic reading and represent a crucial step towards low-power spintronic devices.