Herein, an effective and facile strategy was developed to construct a conformable artificial organ-damage memory system for sensing hazardous gas leakage by operating a single organic transistor at room temperature. The room-temperature gas sensing properties of organic semiconductors in the sustained adsorption and slow desorption endow the bionic device with the gas-controlled memristive effect. This facile electronic device geometry ensures accumulation of the sensing signal towards the single prolonged NO₂ exposure and the long-term repeated NO₂ exposure, allowing the system to simulate the inhalation, metabolism and cumulative organ damage of the human body upon hazardous gas leakage. Our study represents a step forward in simulating the human organ damage and exhibits the potential of the proposed system for future medical monitoring and non-invasive diagnosis in a portable and wearable sensing platform.

Herein, a novel photolithographic stretchable transparent hybrid electrode comprising spin-coated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and a spray-coated single-wall carbon nanotube (SWCNT) network was prepared via one-step photolithography and all-dry etching. The PEDOT:PSS layer provided good interface wettability for the SWCNT aqueous dispersion to form an ultrathin uniform conductive film, which not only allowed the production of a photolithographic high-precision versatile electrode pattern, but also simultaneously ensured that the stretchable transparent electrode had the high optical transparency of up to 84% at 550 nm and good cyclic stretching stability. The photolithographic stretchable transparent electrodes, combined with a spin-coated dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C₈-BTBT) thin film and a mechanical lamination strategy, realized a photolithography-compatible all-solution-processed transparent conformal organic transistor array with the highest mobility of up to 2.7 cm² V⁻¹ s⁻¹ and good operation stability in an LED driving circuit.

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C₈-BTBT film.

Flexible organic thin-film transistors (OTFTs) have received extensive attention due to their outstanding advantages such as light weight, low cost, flexibility, large-area fabrication, and compatibility with solution-processed techniques. However, compared with a rigid substrate, it still remains a challenge to obtain good device performance by directly depositing solution-processed organic semiconductors onto an ultrathin plastic substrate. In this work, ultrathin flexible OTFTs are successfully fabricated based on spin-coated 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) films. The resulting device thickness is only ~320 nm, so the device has the ability to adhere well to a three-dimension curved surface. The ultrathin C8-BTBT OTFTs exhibit a mobility as high as 4.36 cm² V⁻¹ s⁻¹ and an on/off current ratio of over 10⁶. These results indicate the substantial promise of our ultrathin flexible C8-BTBT OTFTs for next-generation flexible and conformal electronic devices.

Intrinsically stretchable organic field-effect transistors (OFETs) with all stretchable device components present a huge potential for future “skin-like” stretchable electronics. However, there generally exists a trade-off between mobility and stretchability in a single semiconductor material. In this work, a strategy of blending poly(3-hexylthiophene) (P3HT) with poly[[2,5-bis(2-octyldodecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl]-alt-[[2,2-(2,5-thiophene)bis-thieno[3,2-b] thiophen]-5,5′-diyl]] (DPPT-TT) is proposed to well balance the trade-off between the mechanical and electrical performance of the OFET device. The blend ratio of the two polymer solution has been proved to exhibit significant effects to achieve a “win–win” situation. The mobility of the optimized blend film is 0.33 cm² V⁻¹ s⁻¹, enhanced by one order of magnitude compared to the neat P3HT film. Almost no cracks appeared in the blend film under a 100% strain, presenting a five-fold improvement compared to the neat DPPT-TT film. Considering the optical properties, thin-film morphology and surface energy, we concluded that such a balance between mobility and stretchability benefits from the interpenetrating network structure of the blend films. Moreover, the stretched blend film maintained a relatively stable mobility until the strain increased to 75%. Our findings can offer a promising approach to balance the trade-off between the mechanical and electrical properties for the future fabrication of high-performance stretchable electronics.