Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have attracted much attention for their merits. In this paper, three main device structures for achieving NLECSLs are reviewed and compared in detail, such as free space bulk diffraction grating external cavity structure, waveguide external cavity structure and confocal Fabry–Perot cavity structure of NLECSLs. The Littrow structure and Littman structure of NLECSLs are introduced from the free space bulk diffraction grating external cavity structure of NLECSLs. The fiber Bragg grating external cavity structure and silicon based waveguide external cavity structure of NLECSLs are introduced from the waveguide external cavity structure of NLECSLs. The results show that the confocal Fabry–Perot cavity structure of NLECSLs is a potential way to realize a lower than tens Hz narrow linewidth laser output.

In this paper, we review the progress of wide tunable Bragg grating external cavity semiconductor lasers (BG-ECSLs). We concentrate on BG-ECSLs based on the wide tunable range for multicomponent detection. Wide tunable BG-ECSLs have many important applications, such as wavelength-division multiplexing (WDM) systems, coherent optical communications, gas detection and atom cooling. Wide tunability, narrow linewidth and a high side-mode suppression ratio BG-ECSLs have attracted much attention for their merits. In this paper, three main structures for achieving widely tunable, narrow linewidth, high side-mode suppression ratio BG-ECSLs are reviewed and compared in detail, such as the volume Bragg grating (VBG) structure, fiber Bragg grating (FBG) structure and waveguide Bragg grating (WBG) structure of ECSLs. The advantages and disadvantages of different structures of BG-ECSLs are analyzed. The results show that WBG-ECSLs are a potential way to realize the integration, small size, wide tuning range, stable spectral output and high side-mode suppression ratio laser output. Therefore, the use of WBG as optical feedback elements is still the mainstream direction of BG-ECSLs, and BG-ECSLs offer a further new option for multicomponent detection and multi-atoms cooling.

In this paper, we review the progress of the development and application of external cavity quantum cascade lasers (ECQCLs). We concentrated on ECQCLs based on the wide tunable range for multi-component detection and applications. ECQCLs in the mid-infrared band have a series of unique spectral properties, which can be widely used in spectroscopy, gas detection, protein detection, medical diagnosis, free space optical communication, and so on, especially wide tuning range, the tuning range up to hundreds of wavenumbers; therefore, ECQCLs show great applications potential in many fields. In this paper, the main external cavity structures of ECQCLs are reviewed and compared, such as the Littrow structure, the Littman structure, and some new structures. Some new structures include the intra-cavity out-coupling structure, multimode interference (MMI) structure, and acousto-optic modulator (AOM) control structure. At the same time, the application research of ECQCLs in gas detection, protein detection, and industry detection are introduced in detail. The results show that the use of diffraction gratings as optical feedback elements can not only achieve wide tuning, but it also has low cost, which is beneficial to reduce the complexity of the laser structure. Therefore, the use of diffraction gratings as optical feedback elements is still the mainstream direction of ECQCLs, and ECQCLs offer a further new option for multi-component detection.

Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and high side-mode suppression ratio external cavity lasers have attracted much attention for their merits. In this paper, two main device-integrated structures for achieving widely tunable, narrow linewidth external cavity lasers on silicon substrates are reviewed and compared in detail, such as MRR-integrated structure and MRR-and-MZI-integrated structure of external cavity semiconductor lasers. Then, the chip-integrated structures are briefly introduced from the integration mode, such as monolithic integrated, heterogeneous integrated, and hybrid integrated. Results show that the silicon-substrate-integrated external cavity lasers are a potential way to realize a wide tuning range, high power, single mode, stable spectral output, and high side-mode suppression ratio laser output.

The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the lasers, such as in wavelength division multiplexing, passive optical networks, mobile backhaul, and spectral sensing technology. In this paper, firstly, the basic structure and principle of integrated external cavity tunable diode lasers are introduced, and then two main integrated structures of 1.55 μm waveband external cavity tunable diode lasers are reviewed and compared in detail, namely the hybrid integrated structure and monolithic integrated structure of 1.55 μm waveband integrated external cavity tunable diode lasers. Finally, the research progress in 1.55 μm waveband integrated external cavity tunable diode lasers in the last decade are summarised, and the advantages and disadvantages of 1.55 μm waveband integrated external cavity tunable diode lasers are analysed. The results show that, with the transformation of optical communication into more complex modulation formats, it is necessary to integrate miniature 1.55 μm waveband external cavity tunable diode lasers. Low-cost integrated 1.55 μm waveband external cavity tunable diode lasers are expected to be used in the next generation of optical transceivers in small-factor modules.

The 1.55 μm TECSL has excellent characteristics such as wide tuning, narrow linewidth, high SMSR, and high output power and has a wide range of applications in optical communications, spectral sensing, gas detection, atomic physics, and biomedicine. For the TECSL, the choice of collimating lens is very significant. In order to obtain a wider tuning range, five structures are constructed in this paper to investigate the effect of lens focal length on the output characteristics of 1.55 μm TECSL. It is shown that when the lens focal length is 4.51 mm, the minimum threshold current is 52 mA, the maximum output power is 42.36 mW, the maximum SMSR is 62.15 dB, the narrowest linewidth is 0.26 nm, and 152.3 nm (1458.2~1610.5 nm) can be tuned continuously. It is shown that different lens focal lengths affect the output characteristics of the TECSL, and the performance of the TECSL can be improved by appropriately changing the lens focal length.