Marco Fanciulli

Prof. Marco Fanciulli

Department of Materials Science, University of Milano-Bicocca, Milano, Italy
orcid

Research Focus & Metrics

Academic Career Length

39Years (1988-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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2 February 2015 in Nature Nanotechnology
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Journal Article
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LTLi Tao
Li Tao
Eugenio CinquantaEugenio Cinquanta
Eugenio Cinquanta
DCDaniele Chiappe
Daniele Chiappe
Carlo GrazianettiCarlo Grazianetti
Carlo Grazianetti
Marco FanciulliMarco Fanciulli
Marco Fanciulli
DADeji Akinwande
Deji Akinwande

10 September 2018 in Journal of the American Chemical Society
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Journal Article
Open access
FLFederico Locardi
Federico Locardi
MCMatilde Cirignano
Matilde Cirignano
DBDmitry Baranov
Dmitry Baranov
ZDZhiya Dang
Zhiya Dang
MPMirko Prato
Mirko Prato
LMLiberato Manna
Liberato Manna
We show here the first colloidal synthesis of double perovskite Cs2AgInCl6 nanocrystals (NCs) with a control over their size distribution. In our approach, metal carboxylate precursors and ligands (oleylamine and oleic acid) are dissolved in diphenyl ether and reacted at 105 °C with benzoyl chloride. The resulting Cs2AgInCl6 NCs exhibit the expected double perovskite crystal structure, are stable under air, and show a broad spectrum white photoluminescence (PL) with quantum yield of ∼1.6 ± 1%. The optical properties of these NCs were improved by synthesizing Mn-doped Cs2AgInCl6 NCs through the simple addition of Mn-acetate to the reaction mixture. The NC products were characterized by the same double perovskite crystal structure, and Mn doping levels up to 1.5%, as confirmed by elemental analyses. The effective incorporation of Mn ions inside Cs2AgInCl6 NCs was also proved by means of electron spin resonance spectroscopy. A bright orange emission characterized our Mn-doped Cs2AgInCl6 NCs with a PL quantum yield as high as ∼16 ± 4%.

17 December 2013 in Advanced Materials
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DCDaniele Chiappe
Daniele Chiappe
ESEmilio Scalise
Emilio Scalise
Eugenio CinquantaEugenio Cinquanta
Eugenio Cinquanta
Carlo GrazianettiCarlo Grazianetti
Carlo Grazianetti
BBBas van Den Broek
Bas van Den Broek
Alessandro MolleAlessandro Molle
Alessandro Molle

19 August 1991 in Applied Physics Letters
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TLT. Lei
T. Lei
Marco FanciulliMarco Fanciulli
Marco Fanciulli
RMR. J. Molnar
R. J. Molnar
TMT. D. Moustakas
T. D. Moustakas
RGR. J. Graham
R. J. Graham
JSJ. Scanlon
J. Scanlon
Zinc blende and wurtzitic GaN films have been epitaxially grown onto (001)Si by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy, using a two-step growth process. In this process a thin buffer layer is grown at relatively low temperatures followed by a higher temperature growth of the rest of the film. GaN films grown on a single crystalline GaN buffer have the zinc blende structure, while those grown on a polycrystalline or amorphous buffer have the wurtzitic structure.

1 July 2019 in Applied Surface Science
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Journal Article
Open access
MCM. Coll
M. Coll
JFJ. Fontcuberta
J. Fontcuberta
MAM. Althammer
M. Althammer
MBM. Bibes
M. Bibes
HBH. Boschker
H. Boschker
FGF. Miletto Granozio
F. Miletto Granozio

30 July 2012 in Advanced Materials
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Journal Article
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DCDaniele Chiappe
Daniele Chiappe
Carlo GrazianettiCarlo Grazianetti
Carlo Grazianetti
GTGrazia Tallarida
Grazia Tallarida
Marco FanciulliMarco Fanciulli
Marco Fanciulli
Alessandro MolleAlessandro Molle
Alessandro Molle