With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and unnecessary thermal damage. In this work, a precision layered stealth dicing (PLSD) method by ultrafast lasers is proposed to separate the semi-insulated 4H-SiC wafer with a thickness of 508 μm. The laser power attenuates linearly from 100% to 62% in a gradient of 2% layer by layer from the bottom to the top of the wafer. A cross section with a roughness of about 1 μm was successfully achieved. We have analyzed the effects of laser pulse energy, pulse width, and crystal orientation of the SiC wafer. The anisotropy of the SiC wafer results in various qualities of PLSD cross sections, with the roughness of the crystal plane {10−10} being 20% lower than that of the crystal plane {11−20}.