Geoff Brennecka

Prof. Geoff Brennecka

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Research Focus & Metrics

Academic Career Length

25Years (2002-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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3 April 2020 in ACS Applied Materials & Interfaces
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Journal Article
Closed access
SYSanaz Yazdanparast
Sanaz Yazdanparast
SSSina Soltanmohammad
Sina Soltanmohammad
AFAnnika Fash-White
Annika Fash-White
GTGarritt J. Tucker
Garritt J. Tucker
GBGeoff Brennecka
Geoff Brennecka

1 September 2016 in Journal of the American Ceramic Society
Verified
Journal Article
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MBMichaela A. Beuerlein
Michaela A. Beuerlein
NKNitish Kumar
Nitish Kumar
TUTedi-Marie Usher
Tedi-Marie Usher
HBHarlan James Brown‐Shaklee
Harlan James Brown‐Shaklee
NRNatthaphon Raengthon
Natthaphon Raengthon
GBGeoff Brennecka
Geoff Brennecka

1 December 2010 in Journal of the American Ceramic Society
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Journal Article
Closed access
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GBGeoff Brennecka
Geoff Brennecka
JIJon F. Ihlefeld
Jon F. Ihlefeld
JMJon‐Paul Maria
Jon‐Paul Maria
BTBruce A. Tuttle
Bruce A. Tuttle
PCPaul G. Clem
Paul G. Clem

17 December 2021 in Science
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Journal Article
Closed access
KTKevin R. Talley
Kevin R. Talley
CPCraig L. Perkins
Craig L. Perkins
DDDavid Diercks
David Diercks
GBGeoff Brennecka
Geoff Brennecka
AZAndriy Zakutayev
Andriy Zakutayev
Nitrides join the perovskite club: Perovskite structured materials have a variety of uses as photovoltaics, capacitors, and micromechanical actuators, along with other applications. Oxides, halides, and chalcogenides all have large numbers of perovskite structured materials. Examples of perovskite nitrides are conspicuously absent, but Talley et al . managed to synthesize one (see the Perspective by Hong). Lanthanum tungsten nitride in the perovskite structure turns out to be piezoelectric, which is ideal for a variety of applications. Perovskite structured nitrides are very attractive because they could easily integrate with the large number of nitride-based semiconducting devices already in use. —BG

29 June 2018 in Physical Review Materials
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Journal Article
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KTKevin R. Talley
Kevin R. Talley
SMSamantha L. Millican
Samantha L. Millican
JMJohn Mangum
John Mangum
SSSebastian Siol
Sebastian Siol
CMCharles B. Musgrave
Charles B. Musgrave
GBGeoff Brennecka
Geoff Brennecka
An understanding of the heterostructural implications on alloying in the aluminum nitride-scandium nitride system (Al1−xScxN) can highlight opportunities and design principles for enhancing desired material properties by leveraging nonequilibrium states. The fundamental thermodynamics, and therefore composition- and structure-dependent mechanisms, underlying property evolution in this system have not been fully described, despite significant recent efforts driven by interest in enhanced piezoelectric performance. Practical realization of these enhanced properties, however, is hindered by the strong driving thermodynamic driving force for phase separation in the system, highlighting the need for increased study into the role of heterostructural alloying on the thermodynamics and composition-structure-property relationships in this system. With this need in mind, ab initio computed alloy thermodynamics and properties are compared to combinatorial thin-film synthesis and characterization to develop a more complete picture of the structure and property evolution across the Al1−xScxN composition space. The combination of structural frustration and a flattened free-energy landscape lead to substantial increases in electromechanical response. The energy scale of alloy metastability is found to be much larger than previously reported, helping to explain difficulties in achieving homogeneous materials with high scandium concentration. Scandium substitution for aluminum softens the wurtzite crystal lattice, and energetic proximity to the competing hexagonal boron-nitride structure enhances the piezoelectric stress coefficient. Overall, this work provides insight into the understanding of the structure-processing-property relationships in the Al1−xScxN system, suggests material design strategies for even greater property enhancements, and demonstrates the increased property tunability and underexplored nature of nonequilibrium heterostructural alloys.

31 May 2022 in Micromachines
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Journal Article
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DDDaniel Drury
Daniel Drury
KYKeisuke Yazawa
Keisuke Yazawa
AZAndriy Zakutayev
Andriy Zakutayev
BHBrendan Hanrahan
Brendan Hanrahan
GBGeoff Brennecka
Geoff Brennecka
Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the largest hurdle comes at higher temperatures for conventional perovskite ferroelectrics. Here, we demonstrate how AlScN can enable high-temperature (>200 °C) nonvolatile memory. The c-axis textured thin films were prepared via reactive radiofrequency magnetron sputtering onto a highly textured Pt (111) surface. Photolithographically defined Pt top electrodes completed the capacitor stack, which was tested in a high temperature vacuum probe station up to 400 °C. Polarization–electric field hysteresis loops between 23 and 400 °C reveal minimal changes in the remanent polarization values, while the coercive field decreased from 4.3 MV/cm to 2.6 MV/cm. Even at 400 °C, the polarization retention exhibited negligible loss for up to 1000 s, demonstrating promise for potential nonvolatile memory capable of high−temperature operation. Fatigue behavior also showed a moderate dependence on operating temperature, but the mechanisms of degradation require additional study.