Spectroscopic ellipsometry (SE), a non-invasive optical technique, is a powerful tool for characterizing surfaces, interfaces, and thin films. By analyzing the change in the polarization state of light upon reflection or transmission through a sample, ellipsometry provides essential parameters such as thin film thickness (t) and optical constants (n, k). This review article discusses the principles of ellipsometry, including the measurement of key values ∆ and Ψ, and the complex quantity ρ. The article also presents the Fresnel equations for s and p polarizations and the importance of oblique angles of incidence in ellipsometry. Data analysis in ellipsometry is explored, including the determination of bandgap and data referencing the electrical properties of materials. The article emphasizes the importance of choosing the appropriate models to fit ellipsometric data accurately, with examples of the Cauchy and Lorentz models. Additionally, the Kramers–Kronig relations are introduced, illustrating the connection between real and imaginary components of optical constants. The review underscores the significance of ellipsometry as a non-destructive and versatile technique for material characterization across a wide range of applications.

Graphene oxide and reduced graphene oxide thin films are very promising materials because they can be used in optoelectronic devices and in a growing range of applications such as touch screens and flexible displays. In this work, graphene oxide (GO) and thermally reduced graphene oxide (rGO) thin films, deposited on Ti/glass substrates, have been obtained by electrophoretic deposition. The morphological and the structural properties of the samples have been investigated by micro-Raman technique, X-ray reflectometry, and SEM analysis. In order to study the optical and electrical properties, variable angle spectroscopic ellipsometry and impedance analysis have been performed. The thermal annealing changes strongly the structural, electrical, and optical properties, because during the thermal processes some amount of sp3 bonds originally present in GO were removed. In particular, the annealing enhances the Ohmic behavior of the rGO film increasing its conductivity and the estimated optical density. Moreover, using electrophoretic deposition, we have found a higher value of optical density for GO thin films, not observed in GO films obtained with other deposition methods.

Despite a growing interest in graphene, an aspect which is less studied is the electrical and optical characterization of graphene oxide (GO)-based transparent conductors obtained using thermal annealing. In addition, few research works have studied the electrical properties of GO and reduced graphene oxide (RGO) films using electrical impedance measurements. In this study, electric impedance measurements are performed on GO and thermally reduced GO films dip-coated on glass substrates. The electric resistance of RGO films decreases by about two orders of magnitude compared to GO films. Moreover, optical microscopy and variable angle spectroscopic ellipsometry (VASE) were carried out on the same samples. Thermal annealing increases the optical conductivity and the absorption coefficient of GO films. Such findings could be used in many optoelectronic applications, improving future GO applicability.

The influence of the bias-voltage on the anisotropic part of the nematic surface energy is analyzed. The experimental data show a strong dependence of the anchoring strength on the bias-voltage when the electrodes of the nematic cell are covered with ${\mathrm{WO}}_3.$ The observed dependence can be interpreted taking into account the ions dissolved in the liquid crystal. We propose a model in which the effect of the bias-voltage is to collect the ions near the electrodes, in a surface layer whose thickness is of the order of the Debye’s screening length. The surplus of electric field due to this ions confinement gives rise to an electrostatic contribution to the total energy that can be considered as a surface energy. The proposed model is in good agreement with the experimental data. The model is used to interpret the observed independence of the anchoring strength on the bias-voltage when the (indium-tin-oxide) electrode is covered with a film of polyimide, or it is without any covering. The influence of a charge emission from the electrodes under the bias voltage on the anchoring energy is also analyzed. Possible applications of the observed phenomenon are discussed.

In this work, we present the experimental evidence of a polarity sensitive electro-optic response in a nematic liquid crystal. The liquid crystal cell was made by using a standard sandwich configuration, with one of the indium tin oxide electrodes covered by a thin layer of tungsten trioxide (WO3), deposited by sputtering. The optical response was inhibited when the electrode covered by WO3 film was anodically charged, while the usual optical response occurred under a reverse field. An ionic diffusion process was associated with the establishment of an internal electric field, which inhibited unipolarly the optical switching.