With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiN_x) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiN_x ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiN_x thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiN_x ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiN_x ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiN_x ALD technique.

Atomic layer deposition is used to convert an (NH₄)₂S cleaned p-In_0.53Ga_0.47As with diethylzinc (DEZ) and water, resulting in the formation of a ZnO/ZnS interfacial passivation layer (IPL). The process is studied using in-situ X-ray photoelectron spectroscopy. DEZ reacts with sulfur and oxygen present on the surface, chemically reducing arsenic 3+ and gallium 3+ to lower oxidation states. The sulfur concentration remains constant during the deposition process while the oxygen concentration on the surface remains small, confirming that the IPL is composed of both ZnO and ZnS. Measurements of metal–oxide–semiconductor capacitors with HfO₂ for the dielectric show that the ZnO/ZnS IPL can nearly eliminate frequency dispersion (<1% per frequency decade) in accumulation and results in small hysteresis (<60 mV) with a D _it in the 10¹¹ eV⁻¹ cm⁻² range in the midgap. Frequency dispersion is observed in the depletion region and is attributed to minority carrier generation from the ZnO present in the IPL.