Wei Wu

Prof. Wei Wu

Ming Hsieh Department of Electrical and Computer Engineering – Electrophysics University of Southern California, Los Angeles, CA 90089, USA
orcid

Research Focus & Metrics

Academic Career Length

28Years (1999-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 September 2009 in Nano Letters
Verified
Journal Article
Closed access
QXQiangfei Xia
Qiangfei Xia
WRWarren Robinett
Warren Robinett
MCMichael W. Cumbie
Michael W. Cumbie
NBNeel Banerjee
Neel Banerjee
TCThomas J. Cardinali
Thomas J. Cardinali
RWR. Stanley Williams
R. Stanley Williams

28 June 2004 in Applied Physics Letters
Verified
Journal Article
Closed access
MAMichael D. Austin
Michael D. Austin
HGHaixiong Ge
Haixiong Ge
Wei WuWei Wu
Wei Wu
MLMingtao Li
Mingtao Li
ZYZhaoning Yu
Zhaoning Yu
SCStephen Y. Chou
Stephen Y. Chou
We report advances in nanoimprint lithography, its application in nanogap metal contacts, and related fabrication yield. We have demonstrated 5nm linewidth and 14nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15psi . We fabricated gold contacts (for the application of single macromolecule devices) with 5nm separation by nanoimprint in resist and lift-off of metal. Finally, the uniformity and manufacturability of nanoimprint over a 4in. wafer were demonstrated.

23 December 2008 in Nano Letters
Verified
Journal Article
Closed access
LVLogeeswaran Vj
Logeeswaran Vj
NKNobuhiko P. Kobayashi
Nobuhiko P. Kobayashi
MIM. Saif Islam
M. Saif Islam
Wei WuWei Wu
Wei Wu
PCPratik Chaturvedi
Pratik Chaturvedi
RWR. Stanley Williams
R. Stanley Williams

1 July 2002 in Applied Physics Letters
Verified
Journal Article
Closed access
PDF file
HCHan Cao
Han Cao
ZYZhaoning Yu
Zhaoning Yu
JWJian Wang
Jian Wang
JTJonas Tegenfeldt
Jonas Tegenfeldt
RARobert H. Austin
Robert H. Austin
SCStephen Y. Chou
Stephen Y. Chou
We made uniform arrays of nanometer scale structures using nanoimprint lithography over large areas (100 mm wafers). The nanofluidic channels were further narrowed and sealed by techniques that are based on nonuniform deposition. The resulting sealed channels have a cross section as small as 10 nm by 50 nm, of great importance for confining biological molecules into ultrasmall spaces. These techniques can be valuable fabrication tools for Nanoelectromechanical Systems and Micro/Nano Total Analysis Systems.

13 January 2005 in Langmuir
Verified
Journal Article
Closed access
GJGun-Young Jung
Gun-Young Jung
ZLZhiyong Li
Zhiyong Li
Wei WuWei Wu
Wei Wu
Yong ChenYong Chen
Yong Chen
DODeirdre L. Olynick
Deirdre L. Olynick
RWR. Stanley Williams
R. Stanley Williams

10 February 2009 in Proceedings of the National Academy of Sciences
Verified
Journal Article
Open access
PDF file
JBJulien Borghetti
Julien Borghetti
ZLZhiyong Li
Zhiyong Li
JSJoseph Straznicky
Joseph Straznicky
XLXuema Li
Xuema Li
DODouglas A. A. Ohlberg
Douglas A. A. Ohlberg
RWR. Stanley Williams
R. Stanley Williams
Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing.