Organic–inorganic lead halide perovskites materials have emerged as an innovative candidate in the development of optoelectronic and photovoltaic devices, due to their appealing electrical and optical properties. Herein, mix halide single-layer (~95 nm) and multilayer (average layer ~87 nm) CH₃NH₃PbIBr₂ thinfilms were grown by a one-step spin coating method. In this study, both films maintained their perovskite structure along with the appearance of a pseudo-cubic phase of (200) at 30.16°. Single-layer and multilayer CH₃NH₃PbIBr₂ thinfilms displayed leaky ferroelectric behavior, and multilayered thinfilm showed a leakage current of ~5.06 × 10⁻⁶ A and resistivity of ~1.60 × 10⁶ Ω.cm for the applied electric field of 50 kV/cm. However, optical analysis revealed that the absorption peak of multilayered perovskite is sharper than a single layer in the visible region rather than infrared (IR) and near-infrared region (NIR). The band gap of the thinfilms was measured by Tauc plot, giving the values of 2.07 eV and 1.81 eV for single-layer and multilayer thinfilms, respectively. The structural analysis has also been performed by Fourier transform infrared spectroscopy (FTIR). Moreover, the fabricated CH₃NH₃PbIBr₂ as an absorber layer for photoelectric cell demonstrated a power conversion efficiency of 7.87% and fill factor of 72%. Reported electrical, optical and photoelectric efficiency-based results suggest that engineered samples are suitable candidates for utilization in optoelectronic and photovoltaic devices.

An appropriate amount of Zn-ions are incorporated into the high Curie temperature bismuth layer-structure ferroelectric material to fabricate Sr_0.2Na_0.4Pr_0.4Bi₄Ti₄O₁₅:xwt%ZnO; (SNPBT:xZn), with x = 0, 0.10, 0.15, and 0.20 ceramic series to investigate the magnetic, ferroelectric, and energy storage efficiency and piezoelectric properties. Pure SNPBT and SNPBT:xZn ceramics have maintained their structure even after the intercalation of Zn-ions at the lattice sites of SNPBT. The addition of ZnO in SNPBT has improved the multifunctional properties of the material at x = 0.15. At room temperature, SNPBT:0.15Zn has shown a high relative density of 96%, exhibited weak ferromagnetic behavior along with a low saturation magnetization (M_s) of 0.028 emu/g with a low coercive field of 306 Oe, a high remnant polarization (P_r) of 9.04 µC/cm², a recoverable energy density ($W_{rec}$) of ~0.5 J/cm³, an energy conversion efficiency (η) of ~41%, a high piezoelectric co-efficient (d₃₃) of 21 pC/N, and an impedance of 1.98 × 10⁷ Ω, which are much improved as compared to pure SBT or pure SNPBT ceramics. Dielectric Constant (ɛ_r) versus temperature plots present the sharp peak for SNPBT:0.15Zn ceramic at a Curie temperature (T_C) ~ 605 °C, confirming the strong ferroelectric nature of the ceramic. Moreover, SNPBT:0.15Zn ceramic has shown strong, piezoelectric, thermally stable behavior, which remains at 76% (16 pC/N) of its initial value even after annealing at 500 °C. The achieved results clearly indicate that SNPBT:0.15Zn ceramic is a promising candidate for future wide-temperature pulse power applications and high-temperature piezoelectric devices.