Wolfram Miller

Dr. Wolfram Miller

Leibniz Institute for Crystal Growth IKZ, Max-Born-Str. 2, 12489 Berlin, Germany

Research Focus & Metrics

Academic Career Length

41Years (1986-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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16 April 2001 in Physical Review Letters
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Wolfram MillerWolfram Miller
Wolfram Miller
Sauro SucciSauro Succi
Sauro Succi
DMD. Mansutti
D. Mansutti
We develop a simple reaction model for the liquid-solid phase transition in the context of the lattice Boltzmann method with enhanced collisions. Calculations for a two-dimensional test problem of Ga melting and for a two-dimensional anisotropic growth of dendrites are presented and commented on.

4 May 2020 in Applied Physics Letters
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SASaud Bin Anooz
Saud Bin Anooz
RGR. Grüneberg
R. Grüneberg
CWC. Wouters
C. Wouters
RSR. Schewski
R. Schewski
MAM. Albrecht
M. Albrecht
APA. Popp
A. Popp
Homoepitaxial (100) β-Ga2O3 films were grown on substrates with miscut angles of 2°, 4°, and 6° toward [00 1 ¯ ] by metal organic vapor phase epitaxy. Step-flow growth mode, resulting in smooth film surfaces and high crystalline quality, could only be achieved if the diffusion length on the film surface corresponds approximately to the width of the terraces. Otherwise, 2D islands or step-bunching is obtained, which results in a deteriorated crystalline quality and reduced Hall mobility of the electrons. By varying the growth parameters such as the O2/Ga ratio, Ar push gas flow, and chamber pressure, the diffusion length could be adjusted so that step-flow growth mode could be achieved at all miscut angles. Furthermore, the growth rate could remarkably be increased from 1.6 nm/min to 4.3 nm/min. For homoepitaxial β-Ga2O3 films grown in step-flow growth mode, TEM measurements revealed a high crystalline quality, which is correlated with a high Hall mobility of 131 cm2/V s at a carrier concentration of 1.6 × 1017cm−3, which is comparable with β-Ga2O3 single crystal bulk values. This study clearly points out the high potential of β-Ga2O3 films for high performance MOSFETs if the influence of the deposition parameters on the structural and electrical properties is well understood.

1 July 2005 in Journal of Computational Physics
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IRIgor Rasin
Igor Rasin
SSSauro Succi
Sauro Succi
Wolfram MillerWolfram Miller
Wolfram Miller

1 April 2002 in Journal of Statistical Physics
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Wolfram MillerWolfram Miller
Wolfram Miller
Sauro SucciSauro Succi
Sauro Succi

28 December 2005 in Physical Review E
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IRI. Rasin
I. Rasin
Wolfram MillerWolfram Miller
Wolfram Miller
Sauro SucciSauro Succi
Sauro Succi
A phase-field lattice kinetic model is presented for the numerical simulation of the dendritic growth of a pure crystal in the presence of thermal transport. A finite-difference scheme for the phase field is combined with an explicit lattice kinetic scheme for the temperature field. The resulting scheme is advanced in time with an adaptive time-marching procedure which permits us to achieve long simulation times with larger time steps than explicit finite-difference and previous kinetic methods. The method is demonstrated for the case of dendritic growth of a single crystal over a wide range of Stefan and capillarity numbers.

28 April 2010 in Physical Review B
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HGHannes Guhl
Hannes Guhl
Wolfram MillerWolfram Miller
Wolfram Miller
KRKarsten Reuter
Karsten Reuter
We present a comprehensive density functional theory study addressing the adsorption, dissociation, and successive diffusion of water molecules on the two regular terminations of SrTiO3(001). Combining the obtained supercell-geometry converged energetics within a first-principles thermodynamics framework we are able to reproduce the experimentally observed hydroxylation of the SrO-termination already at lowest background humidity, whereas the TiO2-termination stays free of water molecules in the regime of low water partial pressures. This different behavior is traced back to the effortless formation of energetically very favorable hydroxyl-pairs on the prior termination. Contrary to the prevalent understanding our calculations indicate that at low coverages also the less water-affine TiO2-termination can readily decompose water, with the often described molecular state only stabilized toward higher coverages.