The quantum yield and fluorescence properties of carbon dots are key issues for environmental detection. In this study, nitrogen–sulfur-doped carbon dots (N,S-CDs) were prepared hydrothermally by adding thiourea to provide the N source. By adjusting the ratio of citric acid (CA) to thiourea (N,S) and adding anhydrous ethanol, blue fluorescent doped carbon dots with a quantum yield of up to 53.80% were obtained. The particle morphology and crystalline organization of the N,S-CDs were analyzed using transmission electron microscopy (TEM) and X-ray diffraction (XRD). Fourier transform infrared (FTIR) spectroscopy was used to illuminate distinct functional units through the recording of typical vibration bands. The luminescence properties of the N,S-CDs were investigated using ultraviolet–visible (UV-vis) absorption spectroscopy and steady-state fluorescence spectroscopy (PL). In addition, the fluorescence stability of the N,S-CDs was studied in detail. The results showed that the functional groups of the N,S-CDs chelate Fe³⁺ ions to quench the fluorescence of carbon dots. This shows that the N,S-CDs exhibit high selectivity for Fe³⁺ ions. With the addition of Fe³⁺ in the concentration of 0–100 µM, the fluorescence intensity of the N,S-CDs exhibited distinct and linear dependence upon the Fe³⁺ concentration (R² = 0.9965), and the detection limit (D = 3ơ/m) was measured as 0.2 µM. The excellent optical properties and Fe³⁺ selectivity of the N,S-CDs provide a huge boost for application in the field of environmental monitoring.

Concurrently achieving high growth rate and high quality in single-crystal diamonds (SCDs) is significantly challenging. The growth rate of SCDs synthesized by microwave plasma chemical vapor deposition (MPCVD) was enhanced by introducing N₂ into the typical CH₄-H₂ gas mixtures. The impact of nitrogen vacancy (NV) center concentration on growth rate, surface morphology, and lattice binding structure was investigated. The SCDs were characterized through Raman spectroscopy, photoluminescence (PL) spectroscopy, and X-ray photoelectron spectroscopy. It was found that the saturation growth rate was increased up to 45 μm/h by incorporating 0.8–1.2% N₂ into the gas atmosphere, which is 4.5 times higher than the case without nitrogen addition. Nitrogen addition altered the growth mode from step–flow to bidimensional nucleation, leading to clustered steps and a rough surface morphology, followed by macroscopically pyramidal hillock formation. The elevation of nitrogen content results in a simultaneous escalation of internal stress and defects. XPS analysis confirmed chemical bonding between nitrogen and carbon, as well as non-diamond carbon phase formation at 0.8% of nitrogen doping. Furthermore, the emission intensity of NV-related defects from PL spectra changed synchronously with N₂ concentrations (0–1.5%) during diamond growth, indicating that the formation of NV centers activated the diamond lattice and facilitated nitrogen incorporation into it, thereby accelerating chemical reaction rates for achieving high-growth-rate SCDs.

Diamond/copper composites with high thermal conductivity and a variable thermal expansion coefficient are promising materials for thermal management applications. However, achieving the desired thermal conductivity of the composite material is difficult due to detachment or weak bonding between diamond and Cu. The interfacial properties of diamond/Cu composites can be improved using metal matrix alloying methods. In this study, we investigate the effects of alloying elements (B, Cr, Hf, Mo, Nb, Si, Ti, V, Zr) on the interfacial properties of diamond/Cu using first-principles calculations. Results showed that all alloying components could increase the interfacial bonding of diamond/Cu. Analysis of the electronic structure revealed that increased interfacial bonding strength after doping was the result of the stronger bonding of the alloying element atoms to the C atoms. The C atoms in the first layer of diamond at the interface formed wave peaks near the Fermi energy level after doping with B or Si atoms, facilitating electron–phonon interaction at the interface. The phonon properties of B₄C and SiC were similar to those of diamond, which facilitated phonon–phonon coupling. B and Si were shown to be better alloying elements when interfacial bond strength and heat transfer were considered.