We present a theoretical study of semiconductor T-structures which may exhibit transistor action based on quantum interference. The electron transmission through a semiconductor quantum wire can be controlled by an external gate voltage that modifies the penetration of the electron wavefunction in a lateral stub, affecting in this way its interference pattern. The structures are modeled as ideal two-dimensional electron waveguides and a tight-binding Green’s function technique is used to compute the electron transmission and reflection coefficients. The calculations show that relatively small changes in the stub length can induce strong variations in the electron transmission across the structure. Operation in the fundamental transverse mode appears to be important for applications. We also show that a bound state of purely geometrical origin nucleates at the intersection between waveguide and stub. The performance of the device can be improved by inserting additional stubs of slightly different lengths. Taking into account the applicable scaling rules, we give estimates of the experimental parameters that optimize the transmission characteristics and speed of operation of the proposed transistor.

We study the Josephson effect between atomic Bose-Einstein condensates. By drawing on an electrostatic analogy, we derive a semiclassical functional expression for the three-dimensional Josephson coupling energy in terms of the condensate density. Estimates of the capacitive energy and of the Josephson plasma frequency are also given. The effect of dissipation due to the incoherent exchange of normal atoms is analyzed. We conclude that coherent Josephson dynamics may already be observable in current experimental systems.

We propose that recent transport experiments revealing the existence of an energy gap in graphene nanoribbons may be understood in terms of Coulomb blockade. Electron interactions play a decisive role at the quantum dots which form due to the presence of necks arising from the roughness of the graphene edge. With the average transmission as the only fitting parameter, our theory shows good agreement with the experimental data.

A theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented. Transmission and reflection coefficients are computed by use of a tight-binding Green function technique. As expected, the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that the penetration of the wave function of the electrons can be controlled by external voltages. We conclude that transistor action based on quantum interference should be observable in such structures, and we present general results for the functional dependences of the transmission coefficient which corresponds to a transconductance.

We argue that the phase across an asymmetric dc SQUID threaded by a magnetic flux can experience an effective ratchet (periodic and asymmetric) potential. Under an external ac current, a rocking ratchet mechanism operates whereby one sign of the time derivative of the phase is favored. We show that there exists a range of parameters in which a fixed sign (and, in a narrower range, even a fixed value) of the average voltage across the ring occurs, regardless of the sign of the external current dc component.