Dr. Fangfei Ming
School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
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Academic Career Length
17Years (2010-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications30 January 2023 in Nature Physics
Journal Article
Fangfei MingXWX. Wu
X. Wu
CCC. Chen
C. Chen
KWK. D. Wang
K. D. WangPMP. Mai
P. MaiHWH. H. Weitering
H. H. Weitering +6
9 September 2020 in Physical Review Letters
Journal Article
XWXuefeng Wu
Xuefeng Wu
Fangfei MingTSTyler S. Smith
Tyler S. SmithGLGuowei Liu
Guowei Liu
FYFei Ye
Fei Ye
HWHanno H. Weitering
Hanno H. Weitering +2
Adsorption of one-third monolayer of Sn on an atomically clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott insulator; however, the system can be modulation doped and metallized using heavily doped -type Si(111) substrates. Here, we show that the hole-doped dilute adatom layer on a degenerately doped -type Si(111) wafer is superconducting with a critical temperature of . While a phonon-mediated coupling scenario would be consistent with the observed , Mott correlations in the Sn-derived dangling-bond surface state could suppress the -wave pairing channel. The latter suggests that the superconductivity in this triangular adatom lattice may be unconventional.
19 August 2011 in ACS Nano
Journal Article
Fangfei MingKWKedong Wang
Kedong Wang
SPShuan Pan
Shuan Pan
JLJiepeng Liu
Jiepeng Liu
XZXieqiu Zhang
Xieqiu Zhang
XXXudong Xiao
Xudong Xiao
+1
6 November 2014 in Physical Review Letters
Journal Article
HZHui Zhang
Hui Zhang
Fangfei MingHKHyun-Jung Kim
Hyun-Jung KimHZHongbin Zhu
Hongbin Zhu
QZQiang Zhang
Qiang Zhang
ZZZhenyu Zhang
Zhenyu Zhang
+4
Exploration and manipulation of electronic states in low-dimensional systems are of great importance in the fundamental and practical aspects of nanomaterial and nanotechnology. Here, we demonstrate that the incorporation of vacancy defects into monatomic indium wires on -type Si(111) can stabilize electronically phase-separated ground states where the insulating and metallic phases coexist. Furthermore, the areal ratio of the two phases in the phase-separated states can be tuned reversibly by electric field or charge doping, and such tunabilities can be quantitatively captured by first principles-based modeling and simulations. The present results extend the realm of electronic phase separation from strongly correlated -electron materials typically in bulk form to weakly interacting -electron systems in reduced dimensionality.
12 November 2024 in ACS Nano
Journal Article
XXXin Xu
Xin Xu
XWXuechun Wang
Xuechun Wang
SYShuming Yu
Shuming Yu
CWChenhui Wang
Chenhui Wang
GLGuowei Liu
Guowei LiuXXXudong Xiao
Xudong Xiao
+17
13 June 2011 in Journal of Physics: Condensed Matter
Journal Article
JLJiepeng Liu
Jiepeng Liu
XWXuefeng Wu
Xuefeng Wu
Fangfei MingXZXieqiu Zhang
Xieqiu Zhang
KWKedong Wang
Kedong Wang
XXXudong Xiao
Xudong Xiao
+1
By measuring the temperature-dependent tunneling spectroscopy of a set of flat-top Pb islands from 3.2 to 15 K, the limiting size of a nine-monolayer-thick Pb island with superconductivity above 3.2 K was determined to be ∼ 30 nm(2), in good agreement with the Anderson criterion. Further analysis indicates that the zero-temperature energy gap decreases significantly faster than the transition temperature when the Pb island size approaches this limit. This leads to a decrease of 2Δ(0)/k(B)T(C) from 4.5 to 3.3, thus showing that the Pb island superconductors undergo a change from strong to weak electron-phonon coupling.
About Me
Prof. Fangfei Ming received his bachelor's degree from Northwestern University in 2007 and his Ph.D. from the Chinese University of Hong Kong in 2012. He is currently an Associate Professor at the School of Electronic and Information Engineering of Sun Yat-sen University and a PhD supervisor. He was a postdoctoral fellow at the Chinese University of Hong Kong from 2012 to 2014, a visiting researcher at the University of Science and Technology of China from 2013 to 2014, and a postdoctoral fellow at the University of Tennessee, Knoxville, from 2014 to 2018. In September 2018, he joined the School of Electronic and Information Engineering, Sun Yat-sen University, and the Guangdong Provincial Key Laboratory of Display Materials. He focuses on experimental research in low-dimensional materials and devices and condensed matter physics.