Yambo is an open source project aimed at studying excited state properties of condensed matter systems from first principles using many-body methods. As input, yambo requires ground state electronic structure data as computed by density functional theory codes such as Quantum ESPRESSO and Abinit. yambo’s capabilities include the calculation of linear response quantities (both independent-particle and including electron–hole interactions), quasi-particle corrections based on the GW formalism, optical absorption, and other spectroscopic quantities. Here we describe recent developments ranging from the inclusion of important but oft-neglected physical effects such as electron–phonon interactions to the implementation of a real-time propagation scheme for simulating linear and non-linear optical properties. Improvements to numerical algorithms and the user interface are outlined. Particular emphasis is given to the new and efficient parallel structure that makes it possible to exploit modern high performance computing architectures. Finally, we demonstrate the possibility to automate workflows by interfacing with the yambopy and AiiDA software tools.

We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab initio calculations, that by properly controlling the doping with either one or two atomic species, a significant modification of both the absorption and the emission of light can be achieved. We have considered impurities, either boron or phosphorous (doping) or both (codoping), located at different substitutional sites of silicon nanocrystals with size ranging from $1.1\text{to}1.8\mathrm{nm}$ in diameter. We have found that the codoped nanocrystals have the lowest impurity formation energies when the two impurities occupy nearest neighbor sites near the surface. In addition, such systems present band-edge states localized on the impurities, giving rise to a redshift of the absorption thresholds with respect to that of undoped nanocrystals. Our detailed theoretical analysis shows that the creation of an electron-hole pair due to light absorption determines a geometry distortion that, in turn, results in a Stokes shift between adsorption and emission spectra. In order to give a deeper insight into this effect, in one case we have calculated the absorption and emission spectra beyond the single-particle approach, showing the important role played by many-body effects. The entire set of results we have collected in this work give a strong indication that with the doping it is possible to tune the optical properties of silicon nanocrystals.

The structural and electronic properties of anatase ${\text{TiO}}_2$ nanocrystals (NCs) are investigated through first-principles calculations. The dependence of the structural properties (e.g., NC volume variations) on the surface chemistry is discussed by considering two different surface coverages (dissociated water and hydrogens). Both prevent a pronounced reconstruction of the surface, thus ensuring a better crystalline organization of the atoms with respect to the bare NC. In particular, the results for the hydrated NC do show the largest overlap with the experimental findings. The band-gap blueshift with respect to the bulk shows up for both the bare and the hydrated NC, whereas hydrogen coverage or oxygen desorption from the bare NCs induce occupied electronic states below the conduction levels thus hindering the gap opening due to quantum confinement. These states are spatially localized in a restricted region and can be progressively annihilated by oxygen adsorption on undercoordinated surface titanium atoms. Formation energy calculations reveal that surface hydration leads to the most stable NC, in agreement with the experimental finding that the truncated bipyramidal morphology is typical of the moderate acidic environment. Oxygen desorption from the bare NC is unfavorable, thus highlighting the stabilizing role of surface oxygen stoichiometry for ${\text{TiO}}_2$. Available experimental data on the electronic and structural properties of ${\text{TiO}}_2$ NCs are summarized and compared with our results.

We compare, through first-principles pseudopotential calculations, the structural, electronic, and optical properties of different size silicon nanoclusters embedded in a ${\text{SiO}}_2$ crystalline or amorphous matrix with that of freestanding, hydrogenated, and hydroxided silicon nanoclusters of corresponding size and shape. We find that the largest effect on the optoelectronic behavior is due to the amorphization of the embedded nanocluster. In that, the amorphization reduces the fundamental gap while increasing the absorption strength in the visible range. Increasing the nanocluster size does not change substantially this picture but only leads to the reduction in the absorption threshold, following the quantum confinement rule. Finally, through the calculation of the optical absorption spectra both in an independent-particle and a many-body approach, we show that the effect of local fields is crucial for describing properly the optical behavior of the crystalline case while it is of minor importance for amorphous systems.

A detailed description, at the atomistic scale, of the dynamics of excess electrons and holes is fundamental in order to improve the performance of many optoelectronic devices. Among all recombination processes, nonradiative decay paths play a fundamental role in most semiconductor devices, such as optoelectronic devices and solar cells, limiting their efficiency. In this work, a precise ab initio analysis of the direct Auger recombination processes in both n- and p-type Si and GaAs crystals is presented. Our simulations of minority carrier Auger lifetimes rely on an accurate electronic band structure, calculated using density functional theory with the inclusion of quasiparticle corrections. The results obtained are in good agreement with experimental data for both n-Si and p-GaAs, proving the importance of the direct Auger recombination mechanism in such systems. On the contrary, we show that different nonradiative recombination paths are necessary to explain the experimental results for both p-Si and n-GaAs.