This review into recent advancements in silicon-based technology, with a particular emphasis on the biomedical applications of silicon sensors. Owing to their diminutive size, high sensitivity, and intrinsic compatibility with electronic systems, silicon-based sensors have found widespread utilization across healthcare, industrial, and environmental monitoring domains. In the realm of biomedical sensing, silicon has demonstrated significant potential to enhance human health outcomes while simultaneously driving progress in microfabrication techniques for multifunctional device development. The review systematically examines the versatile roles of silicon in the fabrication of electrodes, sensing channels, and substrates. Silicon electrodes are widely used in electrochemical biosensors for glucose monitoring and neural activity recording, while sensing channels in field-effect transistor biosensors enable the detection of cancer biomarkers and small molecules. Porous silicon substrates are applied in optical biosensors for label-free protein and pathogen detection. Key challenges in this field, including the interaction of silicon with biomolecules, the economic barriers to miniaturization, and issues related to signal stability, are critically analyzed. Proposed strategies to address these challenges and improve sensor functionality and reliability are also discussed. Furthermore, the article explores emerging developments in silicon-based biosensors, particularly their integration into wearable technologies. The pivotal role of artificial intelligence (AI) in enhancing the performance, functionality, and real-time capabilities of these sensors is also highlighted. This review provides a comprehensive overview of the current state, challenges, and future directions in the field of silicon-based biomedical sensing technologies.

We present highly stretchable polypyrrole (PPy)/polydimethylsiloxane strain sensors of highly improved sensitivity and durability fabricated by a chemical oxidative polymerization with oxygen plasma treatment (O₂ PT). In this study, O₂ PT was performed for 30, 60, and 90 s at each growth stage of the PPy film in three steps to investigate the effects on the sensor performance as well as the microstructural properties of the PPy films. Bonding characteristics with underlying layers and resistance to microcrack generation of the multi-layer PPy films under our given strained state were significantly enhanced by the O₂ PT. The best sensor performance in terms of sensitivity and stability were achieved by PT for 30 s with a maximum gauge factor of ~438 at a uniaxial strain of 50%, excellent durability over 500 stretching/release cycles, and a fast response time of ~50 ms.

Bending strain sensors based on one-dimensional ZnO nanorod (NR) arrays cross-linked with interdigitated electrodes were fabricated on polyethylene terephthalate (PET) substrates. ZnO NRs were grown using the hydrothermal method through the dopings with different transition metals, such as Co, Ni, or Co-plus-Ni, on PET substrates, and their microstructural morphology and crystalline properties were examined by a variety of surface analysis methods. Ultraviolet photoresponse and normalized resistance change were measured according to the bending strains to concave and convex directions, and the highest gauge factors of 175 and 83 were achieved in the convex and concave directions, respectively, at a bending strain of 1.75%, when Co-plus-Ni was doped to the NRs.

We investigated the effects of the crystalline state for seed layers (SLs) on the growth morphology and material characteristics for hydrothermally grown ZnO nanorods (NRs). For this, preheating (PH) at different temperatures (100–300 °C) and O₂ plasma treatment (PT) for 9 min were performed during the growth of SLs on p-Si by the aqueous solution-based method to provide the characteristic change on the NR growth platform. An improvement in material properties was achieved from the ZnO NRs grown on the SL crystals of enhanced crystalline quality in terms of the increased preferred orientation (002), the higher UV emission with suppressed deep-level emissions, the recovery of O/Zn stoichiometry, and the reduction of various intrinsic defects. Ultraviolet photodiodes of a p-Si/n-ZnO-NR structure fabricated under the SL conditions of O₂ PT and PH at 100 °C showed a significantly enhanced on-off current ratio of ~90 at +5 V and faster photoresponse characteristics presenting a reduction in the fall time from 16 to 9 s.