A review on the recent development of intense laser‐driven terahertz (THz) sources is provided here. The technologies discussed include various types of sources based on optical rectification (OR), spintronic emitters, and laser‐filament‐induced plasma. The emphasis is on OR using pump pulses with tilted intensity front. Illustrative examples of newly emerging applications are briefly discussed, in particular strong‐field THz control of materials and acceleration and manipulation of charged particles.

Detailed analysis of the tilted-pulse-front pumping scheme used for ultrashort THz pulse generation by optical rectification of femtosecond laser pulses is presented. It is shown that imaging errors in a pulse-front-tilting setup consisting of a grating and a lens can lead to a THz beam with strongly asymmetric intensity profile and strong divergence, thereby limiting applications. Optimized setup parameters are given to reduce such distortions. We also show that semiconductors can offer a promising alternative to LiNbO₃ in high-energy THz pulse generation when pumped at longer wavelengths. This requires tilted-pulse-front pumping, however the small tilt angles allow semiconductors to be easily used in such schemes. Semiconductors can be advantageous for generating THz pulses with high spectral intensity at higher THz frequencies, while LiNbO₃ is better suited to generate THz pulses with very large relative spectral width. By using optimized schemes the upscaling of the energy of ultrashort THz pulses is foreseen.

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Recent theoretical calculations predicted an order-of-magnitude increase in the efficiency of terahertz pulse generation by optical rectification in lithium niobate when 500 fs long pump pulses are used, rather than the commonly used $\sim 100\mathrm{fs}$ pulses. Even by using longer than optimal pump pulses of 1.3 ps duration, $2.5\times$ higher THz pulse energy (125 μJ) was measured with $2.5\times$ higher pump-to-THz energy conversion efficiency (0.25%) than reported previously with shorter pulses. These results verify the advantage of longer pump pulses and support the expectation that mJ-level THz pulses will be available by cooling the crystal and using large pumped area.

Optical rectification of ultrashort laser pulses in LiNbO₃ by tilted-pulse-front excitation is a powerful way to generate near single-cycle terahertz (THz) pulses. Calculations were carried out to optimize the output THz peak electric field strength. The results predict peak electric field strengths on the MV/cm level in the 0.3–1.5 THz frequency range by using optimal pump pulse duration of about 500 fs, optimal crystal length, and cryogenic temperatures for reducing THz absorption in LiNbO₃. The THz electric field strength can be increased further to tens of MV/cm by focusing. Using optimal conditions together with the contact grating technique THz pulses with 100 MV/cm focused electric field strength and energies on the tens-of-mJ scale are feasible.

Intense pulses at low terahertz (THz) frequencies of 0.1–2 THz are an enabling tool for constructing compact particle accelerators and for strong-field control of matter. Optical rectification in lithium niobate provided sub-mJ THz pulse energies, but it is challenging to increase it further. Semiconductor sources suffered from low efficiency. Here, a semiconductor (ZnTe) THz source is demonstrated, collinearly pumped at an infrared wavelength beyond the three-photon absorption edge and utilizing a contact grating for tilting the pump-pulse front. Suppression of free-carrier absorption at THz frequencies in this way resulted in 0.3% THz generation efficiency, two orders of magnitude higher than reported previously from ZnTe. Scaling the THz energy to the mJ level is possible simply by increasing the pumped area. This unique THz source with excellent focusability, pumped by novel, efficient infrared sources, opens up new perspectives for THz high-field applications.