We report on the analysis of nonlinear current-voltage characteristics exhibited by a set of blocking metal/SnO(2)/metal. Schottky barrier heights in both interfaces were independently extracted and their dependence on the metal work function was analyzed. The disorder-induced interface states effectively pinned the Fermi level at the SnO(2) surface, leading to the observed Schottky barriers. The model is useful for any two-terminal device which cannot be described by a conventional diode configuration.

Here, we report the synthesis and structural characterization of high-quality Zn₃P₂ nanowires via chemical vapour deposition. Structural and morphological characterization studies revealed a reliable growth process of long, uniform, and single-crystalline nanowires. From temperature dependent transport and photoluminescence measurements, we have observed the contribution of different acceptor levels (15, 50, 70, 90, and 197 meV) to the conduction mechanisms. These levels were associated with zinc vacancies and phosphorous interstitial atoms which assigned a p-type character to this semiconductor. From time resolved photoluminescence experiments, a 91 ps lifetime decay was found. Such a fast lifetime decay is in agreement with the exciton transition along the bulk emission from high quality crystalline nanowires.

In this work we report on the transition from metal to insulator conduction of individual single crystalline ${\mathrm{In}}_2$ ${\mathrm{O}}_3$ wires induced by different oxygen concentration during their growth. The transport measurements revealed that the metallic conduction was mainly governed by the acoustic phonon scattering and the insulating character was addressed by the variable range hopping mechanism, which in turn can be considered as a first evidence of the occurrence of an Anderson-like metal-insulator-transition (MIT). The experimental data provided the critical carrier density to be $8\times {10}^{18}$ ${\mathrm{cm}}^{-3}$ corresponding to a critical impurities spacing of 2.5 nm, which was found to be in agreement with previous reported data on polycrystalline indium oxide samples and with our recent finding on ${\mathrm{In}}_2$ ${\mathrm{O}}_3$ semiconducting samples. The approach presented here can be used to grow other metal oxide systems in which oxygen vacancies play a fundamental role for the electron transport features.

In this work, we report the evaluation of a (CuO/WO₃)-CuWO₄ heterostructured system as a methanol and acetone gas sensor in different configurations, contrasted with the pure oxides CuO and WO₃. The samples were synthesized using a modified precipitation route followed by a single thermal treatment step to induce multiphase simultaneous crystallization. The structural characterization by XRD showed that all the materials presented the formation of monoclinic CuO and WO₃ and triclinic CuWO₄. No additional phases were detected in the samples, and a reduction in the crystallite size of the CuO phase after the crystallization in the heterostructured system was observed. FE-SEM analysis made it possible to directly observe the morphology and the structures of the samples at the nanometer scale, showing a heterogeneous grain formation and supporting the formation of a heterostructure. UV-Vis DRS was used to study the optical properties of the materials, and the presence of two optical band gaps was successfully determined, which provides further evidence of heterostructure formation via this modified synthesis route. The variation in the resistance of the materials was observed in the presence of methanol and acetone vapors, where the heterostructure exhibited a substantial change in performance in the configuration with 40% copper precursor (Cu40:W60), the sample that presented the highest response as a sensor against these VOCs. To our knowledge, this is the first time that this system has been reported as a gas sensor, using the multiple configurations of the (CuO/WO₃)-CuWO₄ heterostructured system.