Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1$\mathrm{m}$ pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.

Molecular dynamics simulations, with full Coulomb interaction, are used to model short-pulse photoemission from a finite area in a microdiode. We demonstrate three emission regimes, source-limited emission, space-charge-limited emission for short pulses, and space-charge-limited emission for the steady state. We show that beam brightness is at a maximum during the transition from the source-limited emission regime to the space-charge-limited emission regime for short pulses. From our simulations, it is apparent that the emitter spot size is an important factor when estimating the critical charge density for short-pulse electron emission and that simple capacitive models may considerably underestimate the total charge emitted.

Silicon nanowires (SiNWs) are known to exhibit large piezoresistance (PZR) effect, making it suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalysed top-down etching process. The piezoresistance response of these SiNW arrays was analysed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly \SI{1}{\milli\bar} pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation was determined for isostatic pressure below atmospheric pressure.