A one-step dual-additive strategy enables high-quality wide-bandgap perovskite films with efficient defect passivation, resulting in a certified record PCE of 44.72%, with a high V_oc of 1.069 V, and an FF of 82.3% under U30 light.

Introduction of gallium( iii ) acetylacetonate (GaAA ₃ ) induced Cs _x FA _1−x PbI ₃ –[GaAA ₃ ] ₄ (0 < x < 1) core–shell hybrid-materials based perovskite solar cell with remarkably high stability.

The hybrid Sn–Pb perovskite solar cells with C₆₀ additive were demonstrated to own superior stability and efficiency when exposed to the ambient environment without encapsulation.

Gas quenching and vacuum quenching process are widely applied to accelerate solvent volatilization to induce nucleation of perovskites in blade-coating method. In this work, we found these two pre-crystallization processes lead to different order of crystallization dynamics within the perovskite thin film, resulting in the differences of additive distribution. We then tailor-designed an additive molecule named 1,3-bis(4-methoxyphenyl)thiourea to obtain films with fewer defects and holes at the buried interface, and prepared perovskite solar cells with a certified efficiency of 23.75%. Furthermore, this work also demonstrates an efficiency of 20.18% for the large-area perovskite solar module (PSM) with an aperture area of 60.84 cm². The PSM possesses remarkable continuous operation stability for maximum power point tracking of T₉₀ > 1000 h in ambient air.

Coupling in situ monitoring with supersaturation-rate calculations, we employ a facile solvent-engineering strategy to balance supersaturation rate and coordination capability, enabling 25.38% PSCs (0.09 cm ² ) and a 23.22% mini-module (21.84 cm ² ).