Prof. Dr. Nikos Konofaos

Department of Informatics, Aristotle University of Thessaloniki, Biology Bld, AUTh main campus, Thessaloniki, GR 54124, Greece

Prof. Dr. Nikos Konofaos

Department of Informatics, Aristotle University of Thessaloniki, Biology Bld, AUTh main campus, Thessaloniki, GR 54124, Greece

Co-authors

Following

Followers

Research Focus & Metrics

Explore full metrics on Scilit

Academic Career Length

35Years (1992-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications

1 May 2004 in Microelectronics Journal

Journal Article

Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics

Nikos Konofaos

3 September 2001 in Applied Physics Letters

Journal Article

Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature

Zhongchun Wang

Veronika Kugler

Ulf Helmersson

Nikos Konofaos

E. K. Evangelou

Ping Jin

Deposition of

{SrTiO}_{3}

(STO) thin films by radio-frequency magnetron sputtering in an ultrahigh vacuum system at a low substrate temperature (∼200 °C) was performed in order to produce high-quality

STO /p- Si

(100) interfaces and STO insulator layers with dielectric constants of high magnitude. The STO films were identified as polycrystalline by x-ray diffraction, and were approximated with a layered structure according to the best fitting results of raw data from both Rutherford backscattering spectroscopy and variable angle spectroscopic ellipsometry. Room-temperature current–voltage and capacitance–voltage

(C–V)

measurements on

Al/STO /p- Si

diodes clearly revealed metal–insulator–semiconductor behavior, and the

STO /p- Si

interface state densities were of the order of

10^{11} {eV}^{−1} {cm}^{−2} .

The dielectric constant of the STO film was 65, and the dielectric loss factor varied between 0.05 and 0.55 for a frequency range of 1 kHz–10 MHz. For a 387 nm thick STO film, the dielectric breakdown field was 0.31 MV cm⁻¹, and the charge storage capacity was 2.1 μC cm⁻². These results indicate that STO films are suitable for applications as insulator layers in dynamic random access memories or as cladding layers in electroluminescent devices.

21 March 2011 in Applied Physics Letters

Journal Article

Reduced molybdenum oxide as an efficient electron injection layer in polymer light-emitting diodes

Maria Vasilopoulou

Leonidas C. Palilis

Dimitra G. Georgiadou

Panagiotis Argitis

Stella Kennou

Dimitris Davazoglou

We report a significant improvement in the performance of single layer polymer light-emitting diodes (PLEDs), based on the green emitting copolymer poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,

1^{'}

,3}-thiadiazole)], upon inserting a very thin layer of partially reduced molybdenum oxide (

{MoO}_{x}

, where

x = 2.7

) at the polymer/Al cathode interface. Both fully oxidized

(x = 3)

and partially reduced

(x = 2.7)

thin molybdenum oxide layers were investigated as electron injection layers and their influence on PLED device performance was examined. Improved current density, luminance, and efficiency was achieved only in the case of devices with a thin partially reduced

{MoO}_{2.7}

film as electron injection layer, as a result of improved electron injection and more facile transfer at the modified polymer/Al interface.

10 May 2019 in Scientific Reports

Journal Article

Α Quantum Pattern Recognition Method for Improving Pairwise Sequence Alignment

Konstantinos Prousalis

Nikos Konofaos

Quantum pattern recognition techniques have recently raised attention as potential candidates in analyzing vast amount of data. The necessity to obtain faster ways to process data is imperative where data generation is rapid. The ever-growing size of sequence databases caused by the development of high throughput sequencing is unprecedented. Current alignment methods have blossomed overnight but there is still the need for more efficient methods that preserve accuracy in high levels. In this work, a complex method is proposed to treat the alignment problem better than its classical counterparts by means of quantum computation. The basic principal of the standard dot-plot method is combined with a quantum algorithm, giving insight into the effect of quantum pattern recognition on pairwise alignment. The central feature of quantum algorithmic -quantum parallelism- and the diffraction patterns of x-rays are synthesized to provide a clever array indexing structure on the growing sequence databases. A completely different approach is considered in contrast to contemporary conventional aligners and a variety of competitive classical counterparts are classified and organized in order to compare with the quantum setting. The proposed method seems to exhibit high alignment quality and prevail among the others in terms of time and space complexity.

1 June 2004 in Materials Science and Engineering: B

Journal Article

Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films

S Logothetidis

P Patsalas

E.K Evangelou

Nikos Konofaos

I Tsiaoussis

N Frangis

1 May 1997 in Physica Status Solidi (a)

Journal Article

Characterisation of the Interface States between Amorphous Diamond-Like Carbon Films and (100) Silicon

Nikos Konofaos

I. P. McClean

C. B. Thomas

About Me

Nikos Konofaos was born in Corfu, Greece in 1965. He received his Physics Degree from the University of Ioannina, Greece, in 1987 and his PhD in Electrical and Electronic Engineering from the University of Bradford, UK, in 1993. He is currently a full Professor at the Department of Informatics, Aristotle University of Thessaloniki (AUTh) in Greece. Ηe has served as an assistant professor in the Department of Information and Communication Systems Engineering, University of the Aegean, Greece, as an adjunct faculty member in the Computer Engineering and Informatics Department, University of Patras, Greece and as a Fulbright Research Scholar at the Electrical and Computer Engineering Department, University of Maryland, College Park. His research interests include micro- and nano-electronic circuits and devices, optoelectronics and quantum computers. He has published more than 100 technical papers in refereed journals and conference proceedings. He participates in the technical and scientific committees of international and national conferences, he chaired one international conference and was a technical committee chair for two others and he is serving as a member of the editorial board of three peer review SCI journals. His service to the academic community includes positions as Laboratory Head, Division Head, member of the Research Committee of AUTh, member of several evaluation committees etc.

Prof. Dr. Nikos Konofaos

Prof. Dr. Nikos Konofaos

Research Focus & Metrics

Academic Career Length

Publication Type Breakdown

Representative Publications

About Me