A high-quality Ba₂TiSi₂O₈ (BTS) single crystal was grown using the Czochralski (Cz) pulling method. The thermal expansion and electro-elastic properties of BTS crystal were studied for high temperature sensor applications. The relative dielectric permittivities ${\epsilon }_{11}^T/{\epsilon }_0$ and ${\epsilon }_{33}^T/{\epsilon }_0$ were determined to be 16.3 and 11.8, while the piezoelectric coefficients d_15, d_31, d₃₃ were found to be 17.8, 2.9, and 4.0 pC/N, respectively. Temperature dependence of electro-elastic properties were investigated, where the variation of elastic compliance $s_{55}^E$ (= $s_{44}^E$ ) was found to be 8.5 pC/N) and linear thermal expansion coefficient (8.03 ppm/°C) achieved for BTS crystal along the (47°, φ) direction (φ is arbitrary in 0–360°), together with its good temperature stability up to 650 °C, make BTS crystal a promising candidate for high temperature piezoelectric sensors.