We present several fully printed organic complementary circuits using n- and p-type organic thin-film transistors. n-Type and p-type devices are developed on a flexible polyethylene-naphthalate substrate. All organic layers are deposited using a low-cost screen-printing technique. The inverters show a high gain and a switching point at exactly VDD/2. A seven-stage voltage-controlled oscillator (VCO) is designed with an organic output buffer, using the n- and p-type organic transistors. This VCO oscillates at a frequency of 186 Hz. Finally, two complementary differential amplifiers with high gain and large bandwidth are presented. The amplifiers only draw a 1-μA current from a 40-V power supply.

This paper presents a novel UHF RFID tag antenna for mass-retailed products. The tag is realized on low-cost material. The antenna is composed of two elements: a planar dipole-based antenna, matched with a small inductive coil. In particular, it is able to work when directly mounted on different materials. When the permittivity or the thickness of the material on which it is mounted changes, the antenna's impedance varies around a fixed impedance on the Smith chart. This impedance is close to the conjugate of the RFID chip's input impedance. The different mounting materials tested were cardboard, a paper block, plastic, wood, a bottle of tap water, and a glass bottle. The measurement results indicated a maximum range of eight meters for materials with a low permittivity, and a maximum range close to two meters for denser materials or materials with a higher permittivity.

Modeling and design of CMOS ultra-high-frequency (UHF) voltage multipliers are presented. These circuits recover power from incident radio frequency (RF) signal and supply battery less UHF RF identification (RFID) transponders. An analytical model of CMOS UHF voltage multipliers is developed. It permits to determine the main design parameters in order to improve multiplier performance. The design of this kind of circuits is then greatly simplified and simulation time is reduced. Thanks to this model, a voltage multiplier is designed and implemented in a low-cost electrically erasable programmable read-only memory compatible CMOS process without Schottky diodes layers. Measurements results show communication ranges up to 5 m in the U.S. standard.

This paper presents organic based logic and memory circuits. All those circuits are made with organic N- and P-type transistors. Organic complementary NAND and NOR gates were characterized and show performance equivalent to or better than the literature-reported ones. The presented memory circuits include an SRAM memory point and an edge-triggered flip-flop. The flip-flop is made of six organic two-input and three-input NAND gates, representing a total of 26 organic transistors for a surface of 170 mm². The maximum operating frequency of this flip-flop is 220 Hz under a supply of ±20 V. All the circuits were manufactured using a standard organic sheet-to-sheet process in ambient air. Electrical characteristics remain identical after repeated measurements. Finally, a model matching the presented circuits' behavior was carried out, permitting the design of more complex circuits.

The design of a remotely UHF powered UWB transmitter is presented in 0.13μm CMOS standard process. Power harvesting unit is based on a Dickson voltage multiplier and UWB pulse generator uses filtered combined edge method. Multi-Vt technique and CMOS logic allows pulse generator power consumption between two consecutive pulses to be reduced enough to be remotely powered. It achieves FCC compliant pulses having 1.82Vpp and a PRF of 15kHz at 10m thanks to the power harvesting unit.