Sb₂Se₃ thin films have received increasing interest for their applications in optoelectronics. However, technological intervention demands a material-specific understanding of the reactivity to different environments. Both thermal annealing and laser irradiation carried out in an ambient atmosphere are expected to induce changes in the pristine crystallographic phase of Sb₂Se₃, causing the creation of additional secondary phases. Here, we investigate by means of Raman spectroscopy the effect of thermal annealing and laser irradiation at different fluencies on the structural and vibrational properties of Sb₂Se₃ thin films. The vacuum-annealed Sb₂Se₃ thin films at 290 °C and subjected to laser excitation power above 2 mW exhibit a secondary phase, revealing the occurrence of selenization. Further, in situ X-ray diffraction over a broad range of annealing temperatures in N₂ and ambient atmospheres was employed to study the structural properties of the Sb₂Se₃ thin films. In situ XRD performed in a N₂ atmosphere does not show the formation of the Sb₂O₃ cubic phase upon annealing until 500 °C. Conversely, a thermally activated systematic crystallization was observed upon annealing in an ambient atmosphere with the formation of the Sb₂O₃ phase in the temperature range between 280 and 420 °C, until the complete decomposition of the material at 500 °C. Further, the orientation of vertically stacked (hk1) planes remains unchanged under a N₂ atmosphere, while horizontally stacked (hk0) planes dominate the (hk1) planes under ambient atmospheres.

Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements) are still limiting their market diffusion. For this reason new thin film materials, such as Cu₂ZnSnS₄ or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe₂ and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu₂ZnSnS₄ or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs). The sulfur loss represents one of the major challenges of SnS solar cell technology.

Detailed crystallographic information provided by X-ray diffraction (XRD) is complementary to molecular information provided by Raman spectroscopy. Accordingly, the combined use of these techniques allows the identification of an unknown compound without ambiguity. However, a full combination of Raman and XRD results requires an appropriate and reliable reference database with complete information. This is already available for XRD. The main objective of this paper is to introduce and describe the recently developed Raman Open Database (ROD, http://solsa.crystallography.net/rod). It comprises a collection of high-quality uncorrected Raman spectra. The novelty of this database is its interconnectedness with other open databases like the Crystallography Open Database (http://www.crystallography.net/cod and Theoretical Crystallography Open Database (http://www.crystallography.net/tcod/). The syntax adopted to format entries in the ROD is based on the worldwide recognized and used CIF format, which offers a simple way for data exchange, writing and description. ROD also uses JCAMP-DX files as an alternative format for submitted spectra. JCAMP-DX files are compatible to varying degrees with most commercial Raman software and can be read and edited using standard text editors.

Herein, we introduce a strategy for the fabrication of a sunlight-activated green luminescent Eu²⁺/Dy³⁺ doped strontium aluminate (Sr_1−x−yAl₂O₄:Eu_x ²⁺/Dy_y ³⁺) assisted long persistent, transparent, flexible and water resistant phosphorescent layer via a customized solid state reaction-solution casting method. The XRD result of as-synthesized phosphor shows a pure monoclinic crystal structure with the space group P2₁. This as-synthesized phosphor exhibits green afterglow emission with a broad band peaking ∼528 nm upon a broad range of excitation wavelengths from 368–418 nm, which is ascribed to the characteristic 4f⁶5d¹ → 4f⁷ electronic dipole allowed transition of Eu²⁺ ions. Moreover, the role of Dy³⁺ as an auxiliary activator significantly prolongs the afterglow duration to a large extent by increasing the number of electron traps and their trap depths in the vicinity of Eu²⁺. Accordingly, a brighter afterglow intensity with a time more than 5 hours is observed for the optimal concentration of Eu²⁺/Dy³⁺ in Sr_1−x−yAl₂O₄:Eu_x ²⁺/Dy_y ³⁺, (x = 0.1 and y = 0.2) in the long persistent phosphor. The incorporation of the sunlight-activated as-synthesized Sr_0.7Al₂O₄:Eu_0.1 ²⁺/Dy_0.2 ³⁺ phosphor in a commercially available PVC gold medium offers a highly dispersive transparent luminescent paint, which can be used for the spray coating of monuments, as well as for the fabrication of transparent, flexible and water resistant phosphorescent layers. Hence, these striking features of the luminescent paint, as well as the flexible transparent phosphorescent layer could be potentially utilized in optical displays and defence applications.

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures.