Today, an actual task of photovoltaics is the search for new light-absorbing materials for solar cells, which will make them more efficient and economically affordable. Semiconductor Cu₂NiSn(S,Se)₄ (CNTSSe) thin films are promising materials due to suitable optical and electrical properties. This compound consists of abundant, inexpensive, and low-toxicity elements. However, few results of studying the properties of CNTSSe films have been presented in the literature. This paper presents the results of studying the morphology, phase composition, and crystal structure of the CNTSSe films, which were first obtained by high-temperature annealing of electrodeposited Ni/Cu/Sn/Ni precursors on glass/Mo substrates in chalcogen vapor. The films were studied using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. It has been found that sequential electrochemical deposition makes it possible to obtain the Ni/Cu/Sn/Ni precursors of the required quality for further synthesis of the films. It is shown that high-temperature annealing in chalcogen vapor in air makes it possible to synthesize stable polycrystalline CNTSSe films. The obtained results confirm that the production of CNTSSe films is suitable for use in solar cells by the proposed method, which can be improved by more precise control of the precursor composition and annealing conditions.

In this work, the effect of proton irradiation on the change in the structure of silicon samples doped with platinum was studied. The samples were irradiated with protons at a dose of 9×1014 cm-2 with an energy of 600 keV and a current of 1÷1.5 μA. To determine the change in the structure after irradiation, the methods of X-ray diffraction and atomic force microscopy were used. The obtained results indicate that doping with platinum does not lead to a modification of the cubic crystal structure of silicon, but only to minor changes in the structural characteristics and surface morphology. In this case, proton irradiation of a silicon single crystal with a dose of 9.0×1014 cm–2 with an energy of 600 keV leads to the formation of defects without the formation of an amorphous near-surface layer.

Cu2ZnSnSe4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The

Low-temperature XRD measurements were performed to confirm the phase composition and structural parameters of the electrochemically deposited Cu₂ZnSnSe₄ thin films on flexible metal substrates.

Purpose: This work presents a series of (AgxCu1-x)0.7GaSe2 (0 ≤ x ≤ 1) powders synthesized via a solid-state reaction using the presynthesized ternary compounds Cu0.7GaSe2, Ag0.7GaSe2 and Ag0.7GaSe2.Experimental: A combination of X-ray diffraction (XRD) and Raman spectroscopy was used to establish that the solid solution region in this system is narrow and lies within the range of 0.8 ≤ x < 1.Conclusions: An investigation of low-temperature luminescence spectra and microwave photoconductivity decay kinetics revealed that single-phase samples exhibit increased lifetimes of photogenerated charge carriers. This is attributed to the replacement of deep charge carrier traps, such as selenium vacancies VSe, with shallower cationic copper vacancies associated with VCu and VSe-VCu