A 31-inch 4K flexible active-matrix organic light-emitting diode (AMOLED) display integrating with gate driver on the array (GOA) technology has been proposed and fabricated on a polyimide substrate. The GOA circuits, composed of two series-connected thin-film transistors (TFTs) and dual low-voltage power structure, are introduced to decrease the leakage current in TFTs. They are arranged symmetrically along the sides of the display. Inkjet printing (IJP) OLED process is used to reduce the number of sub-pixels from four (R/G/B/W) in commercial white OLED process to three (R/G/B) and a high pixel density in the display (144 pixels per inch) is achieved. Moreover, top-gated (TG) amorphous indium-gallium-zinc oxide (IGZO) TFTs with good electrical and mechanical reliability, have been successfully utilized to decrease the capacitance load in the display and improve signal transfer speed in GOA. Finally, this 31-inch flexible AMOLED display was operated for 500h under accelerating test conditions of 60°C and 90% humidity.

Ion beam-assisted deposition (IBAD) has been proposed as a promising texturing technology that uses the film epitaxy method to obtain biaxial texture on a non-textured metal or compound substrate. Magnesium oxide (MgO) is the most well explored texturing material. In order to obtain the optimal biaxial texture, the actual thickness of the IBAD-MgO film must be controlled within 12nm. Due to the bombardment of ion beams, IBAD-MgO has large lattice deformation, poor texture, and many defects in the films. In this work, the solution deposition planarization (SDP) method was used to deposit oxide amorphous Y₂O₃ films on the surface of Hastelloy C276 tapes instead of the electrochemical polishing, sputtering-Al₂O₃ and sputtering-Y₂O₃ in the commercialized buffer layer. An additional homogeneous epitaxy MgO (epi-MgO) layer, which was used to improve the biaxial texture in the IBAD-MgO layer, was deposited on the IBAD-MgO layer by electron-beam evaporation. The effects of growth temperature, film thickness, deposition rate, and oxygen pressure on the texture and morphology of the epi-MgO film were systematically studied. The best full width at half maximum (FWHM) values were 2.2° for the out-of-plane texture and 4.8° for the in-plane texture for epi-MgO films, respectively. Subsequently, the LaMnO₃ cap layer and YBa₂Cu₃O₇-x (YBCO) functional layer were deposited on the epi-MgO layer to test the quality of the MgO layer. Finally, the critical current density of the YBCO films was 6 MA/cm² (77 K, 500 nm, self-field), indicating that this research provides a high-quality MgO substrate for the YBCO layer.

High-efficiency deep-blue organic light-emitting diodes (OLEDs) play a crucial role in realizing ultra-high-definition (UHD) flat-panel displays and reducing power consumption. Generally, most reported OLEDs with a Commission Internationale de L’Eclairage (CIE) y coordinate < 0.06 are achieved by traditional fluorescent deep-blue emitters. However, it is challenging to obtain deep-blue fluorescent OLEDs with a high external quantum efficiency (EQE) (reaching the theoretical limit of 5%). In this work, we have successfully employed a hole-transporting material for an emitter, which can increase the efficiency in deep-blue OLEDs. The device employed with the proposed hole-transporting material exhibits deep-blue emission peaks at 427.0 nm with CIE coordinates of (0.155, 0.051), a turn-on voltage (Von) of 4.5 V, and an EQE of 4.5%. The performance of the OLED can be improved by 5.0% by optimizing the device structure. Finally, the flexible display when using the OLED devices exhibited a high image quality.