We report on the fabrication of highly uniform field emitter arrays (FEAs) with an integrated self-aligned extraction gate from bulk molybdenum. All critical dimensions of the emitter tip were determined by a single process step of Inductively Coupled Plasma (ICP) etching. In addition, the height difference between the emitter tip and the gate plane was controlled by the thickness of the SiO₂ dielectric layer. A 10 µm gate aperture molybdenum-FEAs (Mo-FEAs) at a typical 20 µm pitch with 6 µm height was achieved with 8.4 mA/cm² current density at gate voltages of 110 V and the turn-on field of 1.4 V/µm. These self-aligned Mo-FEAs could be expanded to active larger areas to increase the emission current.