Developed over approximately half a century, neural probe technology is now a mature technology in terms of its fabrication technology and serves as a practical alternative to the traditional microwires for extracellular recording. Through extensive exploration of fabrication methods, structural shapes, materials, and stimulation functionalities, neural probes are now denser, more functional and reliable. Thus, applications of neural probes are not limited to extracellular recording, brain-machine interface, and deep brain stimulation, but also include a wide range of new applications such as brain mapping, restoration of neuronal functions, and investigation of brain disorders. However, the biggest limitation of the current neural probe technology is chronic reliability; neural probes that record with high fidelity in acute settings often fail to function reliably in chronic settings. While chronic viability is imperative for both clinical uses and animal experiments, achieving one is a major technological challenge due to the chronic foreign body response to the implant. Thus, this review aims to outline the factors that potentially affect chronic recording in chronological order of implantation, summarize the methods proposed to minimize each factor, and provide a performance comparison of the neural probes developed for chronic applications.

To achieve good long-term temperature stability in devices used in energy-conversion applications, this study is aimed at developing combined ceramics, referred to as PZN-PMN-PZT, comprising Pb(Zn_1/3Nb_2/3)O₃ (PZN) and Pb(Mn_1/3Nb_2/3)O₃ (PMN), which are typical relaxor ferroelectric materials, and Pb(Zr_,Ti)O₃ (PZT). The piezoelectric properties were compared based on several parameters according to the change in the composition ratio between relaxor materials, amounts of Sb₂O₃ dopant, and Zr/Ti ratio in the PZT system. Finally, we established optimal poling conditions to improve the electrical properties of the optimized piezoelectric material, based on the evaluation of ceramic properties according to the applied voltage during the poling process. The optimized composition of the investigated piezoelectric ceramics is represented by 0.14PZN-0.06PMN-0.80PbZr_0.49Ti_0.51 + 0.3 wt.% CuO + 0.3 wt.% Fe₂O₃ with 0.1 wt.% Sb₂O₃ doping, which yielded the superior properties (d₃₃ = 361 pC/N, Q_m = 1234, T_c = 306 °C).

The rapidly growing Li-ion battery market has generated considerable demand for Li-ion batteries with improved performance and stability. All-solid-state Li-ion batteries offer promising safety and manufacturing enhancements. Herein, we examine the effect of substitutional doping at three cation sites in garnet-type Li₇La₃Zr₂O₁₂ (LLZO) oxide ceramics produced by a sol–gel synthesis technique with the aim of enhancing the properties of solid-state electrolytes for use in all-solid-state Li-ion batteries. Building on the results of mono-doping experiments with different doping elements and sites—Al, Ga, and Ge at the Li⁺ site; Rb at the La³⁺ site; and Ta and Nb at the Zr⁴⁺ site—we designed co-doped (Ga, Al, or Rb with Nb) and tri-doped (Ga or Al with Rb and Nb) samples by compositional optimization, and achieved a LLZO ceramic with a pure cubic phase, almost no secondary phase, uniform grain structure, and excellent Li-ion conductivity. The findings extend the current literature on the doping of LLZO ceramics and highlight the potential of the sol–gel method for the production of solid-state electrolytes.

Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated metal–insulator–semiconductor (MIS) structure capacitors using HfO₂ thin films separately deposited by remote plasma (RP) atomic layer deposition (ALD) and direct-plasma (DP) ALD and determined the optimal process temperature by measuring the leakage current and breakdown strength as functions of process temperature. Additionally, we analyzed the effects of the plasma application method on the charge trapping properties of HfO₂ thin films and properties of the interface between Si and HfO₂. Subsequently, we synthesized charge-trapping memory (CTM) devices utilizing the deposited thin films as charge-trapping layers (CTLs) and evaluated their memory properties. The results indicated excellent memory window characteristics of the RP-HfO₂ MIS capacitors compared to those of the DP-HfO₂ MIS capacitors. Moreover, the memory characteristics of the RP-HfO₂ CTM devices were outstanding as compared to those of the DP-HfO₂ CTM devices. In conclusion, the methodology proposed herein can be useful for future implementations of multiple levels of charge-storage nonvolatile memories or synaptic devices that require many states.

Hf_xZr_1−xO₂ (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (P_r) and fatigue endurance of these films. To overcome these limitations, in this study, HZO thin films were fabricated via plasma-enhanced atomic layer deposition (PEALD), and the effects of the deposition and post-annealing temperatures on the density, crystallinity, and electrical properties of the thin films were analyzed. The thin films obtained via PEALD were characterized using cross-sectional transmission electron microscopy images and energy-dispersive spectroscopy analysis. An HZO thin film deposited at 180 °C exhibited the highest o-phase proportion as well as the highest density. By contrast, mixed secondary phases were observed in a thin film deposited at 280 °C. Furthermore, a post-annealing temperature of 600 °C yielded the highest thin film density, and the highest 2P_r value and fatigue endurance were obtained for the film deposited at 180 °C and post-annealed at 600 °C. In addition, we developed three different methods to further enhance the density of the films. Consequently, an enhanced maximum density and exceptional fatigue endurance of 2.5 × 10⁷ cycles were obtained.