In this review, our recent results on the electron-beam domain writing (EBDW) on the nonpolar surfaces of LiNbO₃ crystals of different compositions are presented. Under EB irradiation of the nonpolar surfaces, domains nucleated in irradiation points grow frontally along the polar [Formula: see text]-direction in a thin (of microns in thickness) surface layer; the driving force is the tangential component of space-charge fields induced by EB in irradiation points. This geometry of the experiment provides a possibility of three-dimensional (3D) characterization of domain patterns using the combination of atomic force microscopy (AFM) and second harmonic generation (SHG) confocal microscopy methods. The obtained results permitted us to relate the main characteristics of domain formation (the domain sizes and velocity [Formula: see text] of the frontal motion) to the irradiation conditions (the accelerating voltage [Formula: see text] of scanning electron microscopy (SEM), EB current [Formula: see text], the inserted charge [Formula: see text]). The domain depth [Formula: see text] is controlled by [Formula: see text] via the electron penetration depth; the domain length [Formula: see text] increases linearly with [Formula: see text] owing to the domain frontal growth by the viscous friction law. The electron emission coefficient [Formula: see text] affects the domain formation due to the fundamental dependence of [Formula: see text] on [Formula: see text]. In the framework of current approach to EB charging of insulators, the effect of an enhanced conductance on EBDW characteristics is analyzed. The difference between EBDW characteristics observed in varied LiNbO₃ compositions is discussed in the framework of the intrinsic defect structure of LiNbO₃. The obtained results extend the possibility of EBDW application to a wider range of crystals.

The effect of the accelerating voltage U of the SEM electron beam on the characteristics of microdomains recorded by the electron beam method on the nonpolar Y-surface of LiNbO₃ crystals has been studied. The thickness T _d of domains in the Y direction is determined by the depth range R _e of primary electrons, which depends on U. This makes it possible to define T _d in the range of 0.2–4 μm at U = 5–25 kV, respectively. The electron emission coefficient σ is estimated for different values of U exceeding the second equilibrium point U ₂ (σ = 1) in the σ(U) diagram. These data are used to construct the dependence σ(U) for LiNbO₃. Based on the exposure characteristics of the length L _d of domains growing along the polar Z axis, the dependence of the space charge field controlling the domain planar growth along Z on the surface electron emission σ is found.

The ferroelectric properties of relaxor ferroelectric materials Sr xBa1 − xNb2O6of different compositions have been investigated using scanning probe microscopy and macroscopic polarization methods....