The different coordination modes in fullerene organometallic complexes are reviewed. The main modes are η2 and η5, but there are some interesting studies about the other four, all of them are revised in order to show which is the state of art of this kind of compounds with the respect of the hapticity.

A number of hexaarylbenzene compounds were studied theoretically, in order to compare energy changes as a result of the toroidal delocalization effect that is characteristic of all these species. The energy was studied taking advantage of locally designed isodesmic reactions. Results indicate that the amount of aromaticity manifested by each substituent is a factor that should be considered when assessing the quantity of energy dissipated from each aromatic center. The influence of different substituents on electronic delocalization is also analyzed, as well as the role played by their frontier molecular orbitals.

The structure formed by cobalt phthalocyanine (CoPc) and cobalt octaethylporphyrin (CoOEP) with electron-acceptor tetracyano-π-quinodimethane (TCNQ), was studied by Density Functional Theory (DFT) methods. According to theoretical calculations, both cobalt systems can establish dispersion forces related to TCNQ and also in both cases the link between them is built by means of hydrogen bonds. Based on the results of these DFT calculations, we developed experimental work: the organic semiconductors were doped, and the thermal evaporation technique was used to prepare semiconductor thin films of such compounds. The structure of the films was studied by FTIR and Raman spectroscopy. The optical properties of the CoPc-TCNQ and CoOEP-TCNQ films were investigated by means of UV-Vis measurements. The results obtained were used to estimate the type of transitions and the optical bandgap. The results were compared to the previously calculated theoretical bandgap. The CoOEP-TCNQ film presented the smallest theoretical and experimental bandgap. Finally, the electrical properties of the organic semiconductors were evaluated from a PET (polyethylene terephthalate)/indium tin oxide (ITO)/cobalt macrocycle-TCNQ/silver (Ag) device we prepared. The CoOEP-TCNQ-based device showed an ohmic behavior. The device manufactured from CoPc-TCNQ also showed an ohmic behavior at low voltages, but significantly changed to SCLC (space-charge limited conductivity) at high voltage values.

This study refers to the doping of organic semiconductors by a simple reaction between copper phthalocyanine and tetrathiafulvalene or tetracyanoquinodimethane. The semiconductor films of copper phthalocyanine, doped with tetrathiafulvalene donor (CuPc-TTF) and tetracyanoquinodimethane acceptor (CuPc-TCNQ) on different substrates, were prepared by vacuum evaporation. The structure and morphology of the semiconductor films were studied with infrared (IR) spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The absorption spectra for CuPc-TTF, recorded in the 200–900 nm UV–vis region for the deposited films, showed two peaks: a high energy peak, around 613 nm, and a second one, around 695 nm, with both peaks corresponding to the Q-band transition of the CuPcs. From the spectra, it can also be seen that CuPc-TTF has a B-band at around 330 nm and has a bandgap of approximately 1.4 eV. The B-band in the CuPc-TCNQ spectrum is quite similar to that of CuPc-TTF; on the other hand, CuPc-TCNQ does not include a Q-band in its spectrum and its bandgap value is of approximately 1.6 eV. The experimental optical bandgaps were compared to the ones calculated through density functional theory (DFT). In order to prove the effect of dopants in the phthalocyanine semiconductor, simple devices were manufactured and their electric behaviors were evaluated. Devices constituted by the donor-acceptor active layer and by the hollow, electronic-transport selective layers, were deposited on rigid and flexible indium tin oxide (ITO) substrates by the vacuum sublimation method. The current–voltage characteristics of the investigated structures, measured in darkness and under illumination, show current density values of around 10 A/cm² for the structure based on a mixed-PET layer and values of 3 A/cm² for the stacked-glass layered structure. The electrical properties of the devices, such as carrier mobility (μ) were obtained from the J–V characteristics. The mobility values of the devices on glass were between 1.59 × 10⁹ and 3.94 × 10¹⁰ cm²/(V·s), whereas the values of the devices on PET were between 1.84 × 10⁹ and 4.51 × 10⁹ cm²/(V·s). The different behaviors of the rigid and flexible devices is mainly due to the effect of the substrate.

In the current work, flexible diodes with flat heterojunction and dispersed heterojunction architecture were manufactured with to study the behavior of thin films of disodium phthalocyanine (Na₂Pc). The thin film devices, using the electronic acceptor tetracyano-π-quinodimethane (TCNQ), were fabricated by high-vacuum thermal evaporation with annealing post-treatment in order to optimize their behavior. Theoretical calculations based on density functional theory (DFT) with dispersion force analysis were carried out in order to simulate molecular interactions and to establish the nature of the weak interactions between the Na₂Pc and TCNQ fragments. In the optimized structure of the coupled Na₂Pc-TCNQ, the electronic relationship between phthalocyanine and TCNQ was observed to be through hydrogen bonds with bond lengths of 2.94 and 3.13 Å. Dispersed heterojunction device current density values were considerably larger than those of the flat heterojunction device. Barrier heights of 1.024 and 0.909 eV and charge mobilities of 10⁻¹⁰ and 10⁻⁹ m²/Vs for the flat heterojunction device and the dispersed heterojunction device, respectively, were observed. A small effect was observed on the electrical properties by thermal annealing on the flat heterojunction device. The threshold voltage decreased from 1.203 to 1.147 V and φ_b decreased by 0.001 eV.

In this work, we investigated an organic semiconductor based on zinc 8-hydroxyquinoline (ZnQ₂) and tetracyanoquinodimethane (TCNQ), which can be used as a photoactive layer in organic devices. The semiconductor was optimized by applying density-functional theory (DFT) methods, and four hydrogen bridges were formed between ZnQ₂ and TCNQ. Later, thin films of ZnQ₂-TCNQ were successfully deposited. The films were structurally and morphologically characterized, and the optical characteristics of the photoactive layer were investigated using ultraviolet–visible spectroscopy and time-dependent density-functional theory (TDDFT) calculations. The comparison and analysis of the experimental and theoretical absorption spectra indicate that the optical bandgap of the photoactive layer is 2.4 eV. Additionally, a flexible photo device was manufactured with the active layer ZnQ₂-TCNQ, and its electrical behavior was evaluated under dark and light conditions. The results show a significant change in the behavior of the device when radiation is eliminated; the layer is light sensitive. The electrical resistance in the flexible photo device is associated with the optical behavior of the materials that constitute the active layer.