Vertical-aligned CdS/g-C₃N₄ heterojunction nanocone arrays have been fabricated on silicon(100) substrates by a plasma sputting reaction deposition and pulsed laser deposition, successively.

Nanocrystalline p-type arsenic-doped ZnO (ZnO:As) films have been synthesized on (0001) sapphire substrates by pulsed laser deposition using a ZnO target mixed with 6.6wt% As2O3. The process of synthesizing p-type ZnO:As films was performed in an ambient gas of ultrapure (<99.99%) oxygen. The ambient gas pressure was 5Pa with the substrate temperature in the range of 350–500°C. The ZnO:As films grown at 500°C are p type, and the acceptor concentration in ZnO:As films is about 1.9×1018at.∕cm3 as determined by Hall effect measurements. The concentration of As in ZnO:As films is estimated to be about 1.7% from the x-ray photoemission spectroscopy (XPS) spectrum. Guided by the XPS analysis and a model for large-sized-mismatched group-V dopant in ZnO, an AsZn–2VZn complex was thought to be the most possible acceptor.

Aligned ZnO/ZnSe core/shell nanorods (NRs) with type-II energy band alignment were fabricated by pulsed laser deposition of ZnSe on the surfaces of hydrothermally grown ZnO NRs. The obtained ZnO/ZnSe core/shell NRs are composed of wurtzite ZnO cores and zinc blende ZnSe shells. The bare ZnO NRs are capable of emitting strong ultraviolet (UV) near band edge (NBE) emission at 325-nm light excitation, while the ZnSe shells greatly suppress the emission from the ZnO cores. High-temperature processing results in an improvement in the structures of the ZnO cores and the ZnSe shells and significant changes in the optical properties of ZnO/ZnSe core/shell NRs. The fabricated ZnO/ZnSe core/shell NRs show optical properties corresponding to the two excitonic band gaps of wurtzite ZnO and zinc blende ZnSe and the effective band gap between the conduction band minimum of ZnO and the valence band maximum ZnSe. An extended photoresponse much wider than those of the constituting ZnO and ZnSe and a multi-band photoluminescence including the UV NBE emission of ZnO and the blue NBE emission of ZnSe are observed.