Results from the analysis of the variation of structural defects, such as oxygen vacancies indicate that by adjusting the thickness of the WO₃ films, fabricated by DC reactive sputtering, it is possible to modulate the oxygen vacancies concentration. This has a tremendous influence on the applications of these semiconductor materials. The thicknesses analyzed here are 42, 66, and 131 nm. After the annealing process at 500 °C, films were directly transformed to a stable γ-monoclinic crystal structure with P2₁/n space group, with a preferential orientation in the (200) plane. Atomic force microscopy exhibits nanometer range particle size with the highest roughness and higher surface area for the thinner film. FTIR analysis shows the presence of characteristic bands of the double bond stretching vibrational modes (W=O) and stretching vibrations of the γ(W-O-W) bonds corresponding to the monoclinic WO₃. Raman bands located at 345, and 435 cm⁻¹ are ascribed to the presence of W⁵⁺ species that induces the formation of oxygen vacancies VO. The thinner film shows a decrease in the optical indirect band gap attributed to the formation of oxygen vacancies in combination with W⁵⁺ species that induce the formation of energy states within the forbidden band gap range.

Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400 °C for 6 h was followed by a second annealing at 350 °C for 1 h. Film characterization was carried out by X-ray diffraction (XRD), high-resolution electron transmission microscopy (HRTEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques. The β-WO3 final phase grew in form of columnar crystals and its growth plane was determined by HRTEM.

Manganites of the family La_0.7Ca_0.3−xSr_xMnO₃ were fabricated by four preparation methods: (a) the microwave-assisted sol-gel Pechini method; (b) sol-gel Pechini chemical synthesis; (c) solid-state reaction with a planetary mill; and (d) solid-state reaction with an attritor mill, in order to study the effect of the preparation route used on its magnetocaloric and magnetic properties. In addition, the manganites manufactured by the Pechini sol-gel method were compacted using Spark Plasma Sintering (SPS) to determine how the consolidation process influences its magnetocaloric properties. The Curie temperatures of manganites prepared by the different methods were determined in ~295 K, with the exception of those prepared by a solid-state reaction with an attritor mill which was 301 K, so there is no correlation between the particle size and the Curie temperature. All samples gave a positive slope in the Arrot plots, which implies that the samples underwent a second order Ferromagnetic (FM)–Paramagnetic (PM) phase transition. Pechini sol-gel manganite presents higher values of Relative Cooling Power (RCP) than the solid-state reaction manganite, because its entropy change curves are smaller, but wider, associated to the particle size obtained by the preparation method. The SPS technique proved to be easier and faster in producing consolidated solids for applications in active magnetic regenerative refrigeration compared with other compaction methods.

Nosocomial infections are an important health problem and cause of complications and death in hospitalized patients. This problem should be solved from the preventive angle, avoiding the spread of infections by designing disinfection methods based on the photocatalytic activity of semiconductor materials such as tin oxide (SnO₂). The antimicrobial activity of UV light was tested by using inoculation with Candida albicans ATCC10231 on SnO₂ thin films and counting colony forming units (CFU). The interaction of UV light with SnO₂ was analyzed by density functional theory (DFT) and the extension to the Hubbard model (DFT+U) schemes to predict the electron behavior at the subatomic level. After exposure to UV light, C. albicans showed a reduction of 36.5% in viable cells, and when SnO₂ was included, cell viability was reduced by 60.2%. Measurements of the electronic structure obtained by the first-principle calculations under the DFT and DFT+U schemes showed that the O-p orbitals mediate the oxidation process in the bulk semiconductor. By including the surface effects when cleaving the (1 0 0) plane, the three orbitals O-p, Sn-p, and Sn-s are the mediators. SnO₂ films are promising antimicrobial coatings because UV light has a synergic activity with thin films, resulting in faster disinfection.

The effect of native defects originated by a non-stoichiometric variation of composition in CoSb₃ on I-V curves and Hall effect was investigated. Hysteretic and a non-linear behavior of the I-V curves at cryogenic temperatures were observed; the non-linear behavior originated from the Poole-Frenkel effect, a field-dependent ionization mechanism that lowers Coulomb barriers and increases emission of charge carriers, and the hysteresis was attributed to the drastic decrease of specific heat which produces Joule heating at cryogenic temperatures. CoSb₃ is a narrow gap semiconductor and slight variation in the synthesis process can lead to either n- or p-type conduction. The Sb-deficient CoSb₃ presented an n-type conduction. Using a single parabolic model and assuming only acoustic-phonon scattering the charge transport properties were calculated at 300 K. From this model, a carrier concentration of 1.18 × 10¹⁸ cm⁻³ and a Hall factor of 1.18 were calculated. The low mobility of charge carriers, 19.11 cm²/V·s, and the high effective mass of the electrons, 0.66 m₀, caused a high resistivity value of 2.75 × 10⁻³ Ω·m. The calculated Lorenz factor was 1.50 × 10⁻⁸ V²/K², which represents a decrease of 38% over the degenerate limit value (2.44 × 10⁻⁸ V²/K²).