For mobile THz applications, integrated beam steering THz transmitters are essential. Beam steering approaches using leaky-wave antennas (LWAs) are quite attractive in that regard since they do not require complex feeding control circuits because beam steering is simply accomplished by sweeping the operating frequency. To date, only a few THz LWAs have been reported. These LWAs are based on polymer or graphene substrates and thus it is quite impossible to monolithically integrate these antennas with state-of-the-art indium phosphide (InP) based photonic or electronic THz sources and receivers. Therefore, in this paper, we report on an InP-based THz LWA for the first time. The developed and fabricated THz LWA consists of a periodic leaking microstrip line integrated with a grounded coplanar waveguide to microstrip line (GCPW-MSL) transition for future integration with InP-based photodiodes. For fabrication, a substrate-transfer process using silicon as carrier substrate for a 50 m thin InP THz antenna chip has been established. By changing the operating frequency from 230 GHz to 330 GHz, the fabricated antenna allows to sweep the beam direction quasi-linearly from -46 to 42, i.e. the total scanning angle is 88. The measured average realized gain and 3 dB beam width of a 1.5 mm wide InP LWA are ~11 dBi and 10. The paper furthermore discusses the use of the fabricated LWA for THz interconnects.

THz communications is envisaged for wide bandwidth mobile communications eventually reaching data capacities exceeding 100 Gbit/s. The technology enabling compact chip-integrated transceivers with highly directive, steerable antennas is the key challenge at THz frequencies to overcome the very high free-space path losses and to support user mobility. In this article, we report on mobile and multi-user THz communications using a photonic THz transmitter chip featuring 1D beam steering for the first time. In the proposed approach, 1D THz beam steering is achieved by using a photodiode excited leaky-wave antenna (LWA) in the transmitter chip. The on-chip LWA allows to steer the directive THz beam from 6° to 39° within the upper WR3-band (0.28-0.33 THz). The antenna’s directivity is 14 dBi which is further increased to 23 dBi using an additional hemicylindrical Teflon lens. The 3-dB beam width and coherence bandwidth of the fabricated THz transmitter chips with lens are 9° and 12 GHz, respectively. The proposed approach allows steering the THz beam via the beat frequency of an optical heterodyne system at a speed up to 28°/s. Without using a THz amplifier in the transmitter chip, a data rate of 24 Gbit/s is achieved for a single user for all beam directions and at short wireless distances up to 6 cm. The wireless distance is successfully increased to 32 cm for a lower data rate of 4 Gbit/s, still without using a transmitter amplifier. Also, multi-user THz communications and the overall capacity of the developed THz transmitter chip is studied revealing that up to 12 users could be supported together with a total wireless data capacity of 48 Gbit/s. Fully integrated 2D transmitter chips are expected to reach wireless distances of several meters without additional amplifiers.

In this paper, we report on waveguide-type modified uni-traveling-carrier photodiodes (MUTC-PDs) providing a record high output power level for non-resonant photodiodes in the WR3.4 band. Indium phosphide (InP) based waveguide-type 1.55 µm MUTC-PDs have been fabricated and characterized thoroughly. Maximum output powers of −0.6 dBm and −2.7 dBm were achieved at 240 GHz and 280 GHz, respectively. This has been accomplished by an optimized layer structure and doping profile design that takes transient carrier dynamics into account. An energy-balance model has been developed to study and optimize carrier transport at high optical input intensities. The advantageous THz capabilities of the optimized MUTC layer structure are confirmed by experiments revealing a transit time limited cutoff frequency of 249 GHz and a saturation photocurrent beyond 20 mA in the WR3.4 band. The responsivity for a 16 µm long waveguide-type THz MUTC-PD is found to be 0.25 A/W. In addition, bow-tie antenna integrated waveguide-type MUTC-PDs are fabricated and reported to operate up to 0.7 THz above a received power of −40 dBm.

A novel 3-D multilayer packaging technology for integrating an array of indium phosphide (InP)-based terahertz photodiodes (THz-PDs) with a rectangular waveguide power combiner (WR-PC) is proposed. The packaging concept is based on a vertical integration of an InP THz-PDs array with a multilayered WR-PC made of metallized glass-reinforced epoxy FR4 laminates using direct wafer bonding. The key motivation of this work is to develop a low-cost packaging technology for coherent power combining in the THz regime. The proposed multilayered packaging technology is generic, i.e., in principle, it would allow the integration of different and multiple planar arrays featuring photonic or electronic devices. To our knowledge, this is the first 3-D packaging concept for the THz frequency range that enables the integration of 2-D arrays of photonic or electronic devices. As a proof of concept, we here report on the design, fabrication, and experimental characterization of a straight hollow rectangular waveguide (WR-waveguide) and a 2 x 1 WR-PC for the WR3-band (220-320 GHz). Both packages feature standard cross-sectional hollow WR3-waveguides (862 μm x 431 μm) and corresponding standard UG-387/U-M flanges. They are fabricated using a stack of vertically bonded unit cells, each consisting of a 50-μm-thick glass-reinforced epoxy FR4 laminate with a 23-μm-thick top and bottom metallization. The size of a single quadratic FR4 unit cell is 24 mm x 24 mm. The fabricated straight WR3-waveguide consists of a stack of 57 FR4 unit cells of a total length of 5.4 mm. The measured transmission loss is less than 0.3 dB/mm and the return loss (RL) is less than 10 dB, within the entire WR3-band. Next, a multilayered FR4 2 x 1 WR3-PC is reported. Its design is based on that of a T-junction in H-plane where the inputs are modified to be on the same plane for facilitating subsequent integration with the planar InP chips of THz-PDs. The length of the WR3-PC is intentionally reduced for compactness and its impedance is gradually matched to achieve a low insertion loss (IL) over the entire WR3-band. The fabricated multilayered WR3-PC consists of 41 FR4 unit-cells resulting in a total thickness of only 3.9 mm. For the frequency range from 240 to 320 GHz, the simulated IL, minimum isolation, and RL are 0.16, 4.2, and 6.5 dB, respectively. For the experimental characterization using a WR3-band vector network analyzer (VNA), two multilayered FR4 2 x 1 WR3-PCs are connected back-to-back (B2B). The measured average IL and RL within the frequency range from 240 to 320 GHz are found to be 3.6 dB and below 5.2 dB, respectively. The measured average IL for a single WR3-PC is 1.8 dB, which is higher than expected because of imperfect fabrication and misalignment losses during the integration. An improved fabrication and packaging process will allow mitigating the losses in future runs.

A novel photonic-assisted 2-D Terahertz beam steering chip using only two tuning elements is presented. The chip is based on an array of three leaky wave antennas (LWAs) with a monolithically integrated beamforming network (BFN) on a 50 µm-thick indium phosphide substrate. The THz beam angle in elevation (E-plane) is controlled via optical frequency tuning using a tunable dual-wavelength laser. An optical delay line is used for azimuth (H-plane) beam control. The simulated beam scanning range is 92° in elevation for a frequency sweep from 0.23 THz to 0.33 THz and 69.18° in azimuth for a time delay of 3.6 ps. For the frequency range from 0.26 THz to 0.32 THz, it is confirmed experimentally that the THz beam scans from −12° to +33°, which is in good agreement with the numerical simulations. The beam direction in azimuth scans with a total angle of 39° when applying a delay difference of 1.68 ps. A good agreement is found between theoretically predicted and experimentally determined THz beam angles with a maximum angle deviation below 5°. The experimental scanning angles are limited due to the mechanical constraints of the on-wafer probes, the on-chip integrated transition and the bandwidth of the THz receiver LNA. The mechanical limitation will be overcome when using a packaged chip.

In this manuscript, we report on a 1 × 4 optical beam forming network (OBFN) chip using optical phase shifters (OPSs) based on thermo-optically controlled optical ring resonators (ORRs) for 1D beam steering at 0.3 THz. The 1 × 4 OBFN chip consists of four OPSs and is fabricated using TriPleX technology. Each of the four OPSs is realized by two cascaded identical ORRs, to reach a phase shift of 2π. To allow transfer of the optical phase shift to the THz domain by optical heterodyning in high-frequency 1.55 µm modified uni-travelling carrier photodiodes, the ORRs are designed such that one carrier of the optical heterodyne signal is at the ORR’s resonance frequency, whereas the second optical heterodyne signal is at its off-resonance. By adjusting the resonance frequencies of the two ORRs in each OPS synchronously, a relative phase variation between two optical heterodyne carriers of up to 2π with a tuning efficiency of 0.058 W/π, is experimentally demonstrated. Due to the dispersive power transmission loss of the ORRs, phase tuning leads to a power variation of the optical heterodyne-generated signals up to 3.8 dB, which is experimentally characterized at 0.295 THz. It is shown numerically that this power variation only has a minor impact on the steering performance of a 1 × 4 phased array. The determined beam direction deviation and maximum absolute radiation power change are smaller than 1° and 2 dB, respectively. By sweeping the phase difference between two adjacent THz antennas in the 1 × 4 phased array, from −120° to 120°, a beam steering range of ~62° is demonstrated numerically at 0.295 THz.