Juan Hinojosa was born in Dunkerque, France, in 1965. He received the Diplôme d’Etudes Approfondies (DEA) and the Ph.D. degree in electronics from Université des Sciences et Technologies de Lille (USTL), Lille, France, in 1990 and 1995, respectively.
In 1990, he joined the Hyper-frequency and Semiconductor Department of the Nanotechnologies and Microelectronics, Electronics Institute, as a research student, where he was involved in the development of electromagnetic characterization techniques of materials at microwave frequencies. Since 1999, he has developed his teaching and research activities at the Universidad Politécnica de Cartagena, Cartagena, Spain. His research interests include characterization techniques for materials in the microwave frequency range, and the development of novel microwave devices and modeling techniques for the design of microwave devices.
Juan Hinojosa was born in Dunkerque, France, in 1965. He received the Diplôme d’Etudes Approfondies (DEA) and the Ph.D. degree in electronics from Université des Sciences et Technologies de Lille (USTL), Lille, France, in 1990 and 1995, respectively.
In 1990, he joined the Hyper-frequency and Semiconductor Department of the Nanotechnologies and Microelectronics, Electronics Institute, as a research student, where he was involved in the development of electromagnetic characterization techniques of materials at microwave frequencies. Since 1999, he has developed his teaching and research activities at the Universidad Politécnica de Cartagena, Cartagena, Spain. His research interests include characterization techniques for materials in the microwave frequency range, and the development of novel microwave devices and modeling techniques for the design of microwave devices.