This paper presents a novel passive intermodulation (PIM) prediction method considering random contact behavior using a Monte Carlo method for a coaxial connector. A smart contact model for a contact unit at a microcosmic level is proposed. Using Monte Carlo approximation and micromeasurements, different random distributed contact samples for different contact components inside the coaxial connector are reconstructed. In the experiment, PIM on inner and outer conductor was tested and compared with predication. A good agreement proves the proposed PIM prediction method is efficient. Rather than generating a single PIM prediction value, this method will give a PIM confidence interval for all the potential PIM values considering the contact force statistical behavior. The work will help analyze fluctuated PIM on coaxial connectors and inspire a new method to predict PIM risk.

Porous Ag/TiO₂/Au coatings with excellent multipactor suppression were prepared by fabrication of porous Ag surface through two-step wet chemical etching, synthesis of TiO₂ coatings by electroless-plating-like solution deposition and deposition of Au coatings via electroless plating. Porous structure of Ag surface, TiO₂ coatings on porous Ag surface and Au coatings on porous Ag/TiO₂ surface were verified by field-emission scanning electron microscopy, the composition and crystal type of TiO₂ coatings was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. Secondary electron yield (SEY) measurement was used to monitor the SEY coefficient of the porous Ag coatings and Ag/TiO₂/Au coatings. The as-obtained porous Ag coatings were proved exhibiting low SEY below 1.2, and the process was highly reproducible. In addition, the porous Ag/TiO₂/Au coatings showed excellent multipactor suppression with the SEY 1.23 and good environmental stability. It is worth mentioning that the whole preparation process is simple and feasible, which would provide a promising application in RF devices.

The underlying mechanisms of multipactor between dielectric and metal and the discharge threshold of practical dielectric components have been investigated numerically and experimentally in this paper. The reduction in secondary electron yield (SEY) and the change in surface condition are achieved using the microstructure processing technology on both of ferrite dielectric and metal. Combined with the electromagnetic particle-in-cell method, the SEY model fit with the experimental data is utilized to simulate multipactor in three groups of ferrite circulators with different surface conditions. Simulation and experimental results demonstrate that the multipactor threshold of the circulator is increased by a factor of 2 through the SEY reduction on the ferrite and is increased by a factor of more than 8, from 380 W to more than 3400 W, through the SEY reduction on both of the ferrite and the metal. Different multipactor discharge mechanisms, including two-side multipactor with positive charge accumulation, singe-side multipactor with negative charge accumulation, and multipactor suppression effect, exist in circulators with the same physical structure and different surface conditions.

The novel coronavirus pneumonia triggered by COVID-19 is now raging the whole world. As a rapid and reliable killing COVID-19 method in industry, electron beam irradiation can interact with virus molecules and destroy their activity. With the unexpected appearance and quickly spreading of the virus, it is urgently necessary to figure out the mechanism of electron beam irradiation on COVID-19. In this study, we establish a virus structure and molecule model based on the detected gene sequence of Wuhan patient, and calculate irradiated electron interaction with virus atoms via a Monte Carlo simulation that track each elastic and inelastic collision of all electrons. The characteristics of irradiation damage on COVID-19, atoms’ ionizations and electron energy losses are calculated and analyzed with regions. We simulate the different situations of incident electron energy for evaluating the influence of incident energy on virus damage. It is found that under the major protecting of an envelope protein layer, the inner RNA suffers the minimal damage. The damage for a ∼100-nm-diameter virus molecule is not always enhanced by irradiation energy monotonicity, for COVID-19, the irradiation electron energy of the strongest energy loss damage is 2 keV.

Multipactor, a frequent detrimental effect in space high power systems, can degrade the performance of space microwave components or even cause devastation. Surface coatings with a low secondary electron yield (SEY) have been verified to mitigate multipactor efficiently, and some literature indicates that titanium nitride (TiN) coating is an excellent multipactor suppressor due to its recognized low SEY, whereas so far, the theoretical analysis for interpreting secondary electron emission (SEE) characteristics of TiN coatings is scarce. In this work, we experimentally and theoretically investigate the SEE characteristics of TiN coatings. We fabricate seven TiN coatings at different N₂ concentrations by RF sputtering. The microscopic analysis indicates that the nanostructured TiN coatings are more likely to be formed at low N₂ concentration, inversely, the compact TiN films are more likely to be formed at high N₂ concentration. The SEE measurement shows that the nanostructured TiN coatings are more efficient to trap electrons than the compact TiN films do. Furthermore, via measuring resistivity, we find a novel regularity that the variation in true SEY largely depends on the resistivity for compact TiN films. Namely, the true SEY of compact TiN films linearly decreases as their resistivity exponentially declines. Then, we establish an equation to describe the true SEY as a function of resistivity via applying the semiconductor conductivity theory to Dionne's SEE model. The equation qualitatively interprets the experimental regularity. This work presents a probability to control the SEE level of TiN coatings by adjusting resistivity and is of significance to comprehend the SEE of semiconductors.