Specific contact resistance (ρ _c ), commonly extracted by Cox and Strack method (CSM) and transfer length method (TLM), is one of the most important properties of carrier-selective contacts. However, in most cases, the hole-selective contacts (HSCs) deposited on n-type silicon (n-Si) substrate are Schottky heterojunction other than Ohmic contact, impeding the accurate extraction of ρ _c by CSM and TLM. In this paper, an expanded CSM is proposed to precisely extract the ρ _c of MoO _x /n-Si heterojunction, achieving a generally lower coefficient of variation. The current transport characteristic and the ρ _c value of MoO _x /n-Si hetero-contact are further verified by technology computer aided design (TCAD) simulation. The results demonstrate that the expanded CSM enables a more precise ρ _c extraction, a better preparation technology compatibility, and a wider range of application, compared to TLM.

Blistering-free poly-films were achieved by introducing carbon impurities, showing a proof-of-concept certified efficiency of 23.82% based on n-Si/SiO _x /poly-Si contacts.