This study employs theoretical simulations to identify ways to improve the efficiency of CsSnI ₃ -based perovskite solar cells with PCBM ETL. The optimized device with CFTS HTL with a structure of ITO/PCBM/CsSnI ₃ /CFTS/Se shows the highest PCE of 24.73%.

Antimony (Sb) chalcogenides such as antimony selenide (Sb₂Se₃) and antimony sulfide (Sb₂S₃) have distinct properties to be used as absorber semiconductors for harnessing solar energy including high absorption coefficient, tunable bandgap, low toxicity, phase stability. The potentiality of Sb₂Se₃ and Sb₂S₃ as absorber material in Al/FTO/Sb₂Se₃(or Sb₂S₃)/Au heterojunction solar cells (HJSCs) with 2D tungsten disulfide (WS₂) electron transport layer (ETL) layer has been investigated numerically using SCAPS-1D solar simulator. A systematic investigation of the impact of physical properties of each active material of Sb₂Se₃, Sb₂S_3, and WS₂ on photovoltaic parameters including layer thickness, carrier doping concentration, bulk defect density, interface defect density, carrier generation, and recombination. This study emphasizes the exploration of causes of low performance of actual devices and demonstrates the individual variation in the open-circuit voltage (V_OC), short-circuit current density (J_SC), fill factor (FF), power conversion efficiency (PCE) and quantum efficiency (QE). Thereby, highly potential heterostructures of Al/FTO/WS₂/absorber (Sb₂Se₃ or Sb₂S₃)/Au proposed, in which, the PCE over 28.20 and 26.60% obtained with V_OC of 850 and 1230 mV, J_sc of 38.0 and 24.0 mA/cm², and FF of 86.0 and 89.0% for Sb₂Se₃ and Sb₂S₃ absorber, respectively. These detailed findings revealed that the Sb-chalcogenide heterostructure with potential WS₂ ETL can be used to realize the fabrication of feasible thin film solar cells and thus the design of high-efficiency high-current (HEHC) and high-efficiency high-voltage (HEHV) solar panels.

Researchers are currently showing interest in molybdenum disulfide (MoS₂)-based solar cells due to their remarkable semiconducting characteristics. The incompatibility of the band structures at the BSF/absorber and absorber/buffer interfaces, as well as carrier recombination at the rear and front metal contacts, prevents the expected result from being achieved. The main purpose of this work is to enhance the performance of the newly proposed Al/ITO/TiO₂/MoS₂/In₂Te₃/Ni solar cell and investigate the impacts of the In₂Te₃ BSF and TiO₂ buffer layer on the performance parameters of open-circuit voltage (V _OC), short-circuit current density (J _SC), fill factor (FF), and power conversion efficiency (PCE). This research has been performed by utilizing SCAPS simulation software. The performance parameters such as variation of thickness, carrier concentration, the bulk defect concentration of each layer, interface defect, operating temperature, capacitance-voltage (C-V), surface recombination velocity, and front as well as rear electrodes have been analyzed to achieve a better performance. This device performs exceptionally well at lower carrier concentrations (1 × 10¹⁶ cm^-3) in a thin (800 nm) MoS₂ absorber layer. The PCE, V _OC, J _SC, and FF values of the Al/ITO/TiO₂/MoS₂/Ni reference cell have been estimated to be 22.30%, 0.793 V, 30.89 mA/cm², and 80.62% respectively, while the PCE, V _OC, J _SC, and FF values have been determined to be 33.32%, 1.084 V, 37.22 mA/cm², and 82.58% for the Al/ITO/TiO₂/MoS₂/In₂Te₃/Ni proposed solar cell by introducing In₂Te₃ between the absorber (MoS₂) and the rear electrode (Ni). The proposed research may give an insight and a feasible way to realize a cost-effective MoS₂-based thin-film solar cell.